ES3G/7 General Semiconductor, ES3G/7 Datasheet

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ES3G/7

Manufacturer Part Number
ES3G/7
Description
Manufacturer
General Semiconductor
Datasheet
Document Number: 88590
Revision: 20-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AB (SMC)
Surface Mount Ultrafast Plastic Rectifier
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
A
= 25 °C unless otherwise noted)
300 V, 400 V
150 °C
100 A
35 ns
3.0 A
1.1 V
L
= 110 °C
SYMBOL
T
V
V
V
J,
I
I
F(AV)
FSM
RRM
RWM
RMS
T
STG
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
peak of 260 °C
and WEEE 2002/96/EC
use
inverters
Vishay General Semiconductor
in
ES3F
300
225
210
EF
high
- 55 to + 150
for
100
3.0
frequency
consumer,
ES3G
400
300
280
EG
ES3F & ES3G
rectification
computer
www.vishay.com
UNIT
°C
V
V
V
A
A
and
and
1

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ES3G/7 Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88590 For technical questions within your region, please contact one of the following: Revision: 20-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Vishay General Semiconductor FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • ...

Page 2

... ES3F & ES3G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER (1) Maximum instantaneous forward voltage Maximum DC reverse current at working peak reverse voltage Maximum reverse recovery time Maximum reverse recovery time Maximum reverse recovery current Maximum stored charge Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width duty cycle ...

Page 3

... A, 100 A/µ 100 125 Junction Temperature (°C) Figure 5. Reverse Switching Characteristics Document Number: 88590 For technical questions within your region, please contact one of the following: Revision: 20-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Vishay General Semiconductor 100 10 1 1.3 1.5 0.1 Figure 6. Typical Junction Capacitance 3.0 2.5 2.0 1.5 1.0 0.5 ...

Page 4

... ES3F & ES3G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) 0.126 (3.20) 0.114 (2.90) 0.260 (6.60) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) www.vishay.com For technical questions within your region, please contact one of the following: 4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Cathode Band 0.246 (6.22) 0.220 (5.59) ...

Page 5

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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