55GN01CA-TB-E ON Semiconductor

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55GN01CA-TB-E

Manufacturer Part Number
55GN01CA-TB-E
Description
Transistors RF Bipolar Power SWITCHING DEVICE
Manufacturer
ON Semiconductor

Specifications of 55GN01CA-TB-E

Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
5.5 GHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
5 mA
Maximum Dc Collector Current
70 mA
Power Dissipation
200 mW
Package / Case
CP
Gain Bandwidth Product Ft
4.5 GHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
+ 25 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
55GN01CA-TB-E
Manufacturer:
ON/安森美
Quantity:
20 000

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