MC100EP16VBDTR2G ON Semiconductor, MC100EP16VBDTR2G Datasheet - Page 3

• Manufacturer Part Number: MC100EP16VBDTR2G
• Description: IC RCVR/DRVR 5V DIFF ECL 8-TSSOP
• Manufacturer: ON Semiconductor
• Series: 100EPr

Specifications of MC100EP16VBDTR2G

• Logic Type: Differential Receiver/Driver
• Supply Voltage: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Bits: -

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Input and output parameters vary 1:1 with V
4. All loading with 50 W to V
5. V
Table 3. MAXIMUM RATINGS
Table 4. 100EP DC CHARACTERISTICS, PECL
Symbol
Symbol
V
V
V
I
I
T
T
q
q
q
q
q
T
q
I
V
V
V
V
V
V
I
I
out
BB
EE
IH
IL
A
stg
JA
JC
JA
JC
JA
sol
JC
CC
EE
I
OH
OL
IH
IL
BB
IHCMR
input signal.
IHCMR
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Thermal Resistance (Junction−to−Case)
Power Supply Current
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 4)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 5)
Input HIGH Current
Input LOW Current
BB
Sink/Source
Characteristic
CC
Parameter
EE
− 2.0 V.
, V
IHCMR
max varies 1:1 with V
CC
. V
Pb−Free
EE
can vary +0.3 V to −2.2 V.
Pb
V
2155
1305
2075
1355
1775
CC
Min
http://onsemi.com
2.0
0.5
27
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
(Note 2)
= 3.3 V, V
EE
CC
EE
CC
CC
Condition 1
= 0 V
= 0 V
−40°C
= 0 V
= 0 V
2280
1430
1875
. The V
Typ
37
3
EE
IHCMR
= 0 V (Note 3)
2405
1555
2420
1675
1975
Max
150
3.3
47
range is referenced to the most positive side of the differential
2155
1305
2075
1355
1775
Min
2.0
0.5
22
V
V
8 SOIC
8 SOIC
8 SOIC
8 TSSOP
8 TSSOP
8 TSSOP
DFN8
DFN8
DFN8
I
I
v V
w V
Condition 2
25°C
2280
1400
1875
Typ
CC
EE
30
2405
1555
2420
1675
1975
Max
150
3.3
38
2155
1305
2075
1355
1775
Min
2.0
0.5
24
−65 to +150
−40 to +85
41 to 44
41 to 44
35 to 40
Rating
2280
1380
1875
85°C
Typ
± 0.5
32
100
190
130
185
140
129
265
265
−6
−6
50
84
6
6
2405
1555
2420
1675
2045
Max
150
3.3
40
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
Unit
mA
mA
mA
mA
mV
mV
mV
mV
mV
°C
°C
°C
mA
mA
V
V
V
V
V