MC100EPT22DG ON Semiconductor, MC100EPT22DG Datasheet - Page 4

• Manufacturer Part Number: MC100EPT22DG
• Description: IC XLATOR DL TTL/CMOS-PECL 8SOIC
• Manufacturer: ON Semiconductor
• Series: 100EPTr

Specifications of MC100EPT22DG

• Logic Function: Translator
• Number Of Bits: 2
• Input Type: LVCMOS, LVTTL
• Output Type: LVPECL
• Number Of Channels: 2
• Number Of Outputs/channel: 1
• Differential - Input:output: No/Yes
• Propagation Delay (max): 0.675ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage: 3 V ~ 3.6 V
• Logic Type: Translator
• Logic Family: ECL
• Translation: LVCMOS/LVTTL to LVPECL
• Propagation Delay Time: 0.675 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Rate: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC100EPT22DGOS

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
5. Measured using a 2.4 V source, 50% duty cycle clock source. All loading with 50 W to V
6. Skew is measured between outputs under identical transitions and conditions on any one device.
7. Device−to−Device Skew for identical transitions at identical V
Table 6. AC CHARACTERISTICS
Symbol
f
t
t
t
t
t
t
max
PLH
PHL
skew
JITTER
r
f
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Maximum Frequency (Figure 2)
Propagation Delay to
Output Differential
Within−Device Skew (Note 6)
Device−to−Device Skew (Note 7)
Random Clock Jitter (Figure 2)
Output Rise/Fall Times
(20% − 80%)
900
800
700
600
500
400
300
200
100
É É É É É É É É É É É É É É É
É É É É É É É É É É É É É É É
0
0
Characteristic
200
V
CC
= 3.0 V to 3.6 V, GND = 0.0 V (Note 5)
400
Q, Q
600
Min
250
0.8
50
http://onsemi.com
Figure 2. F
FREQUENCY (MHz)
CC
−40°C
Typ
400
200
110
1.1
0.2
50
levels.
800
4
max
Max
650
100
400
200
< 1
/Jitter
1000
Min
250
0.8
60
(JITTER)
1200
CC
25°C
Typ
420
200
120
1.1
0.2
50
− 2.0 V.
Max
675
100
425
220
< 1
1400
Min
300
0.8
70
1600
9
8
7
6
5
4
3
2
1
85°C
Typ
500
200
140
É É
É É É É
1.1
0.2
50
Max
700
100
400
250
< 1
GHz
Unit
ps
ps
ps
ps