CAT25010VP2I-GT3 ON Semiconductor, CAT25010VP2I-GT3 Datasheet - Page 8
CAT25010VP2I-GT3
Manufacturer Part Number
CAT25010VP2I-GT3
Description
EEPROM 1K-Bit SPI Serial
Manufacturer
ON Semiconductor
Datasheet
1.CAT25010VP2I-GT3.pdf
(18 pages)
Specifications of CAT25010VP2I-GT3
Product Category
EEPROM
Rohs
yes
Memory Size
1 Kbit
Organization
128 x 8
Data Retention
100 yr
Maximum Clock Frequency
5 MHz
Maximum Operating Current
2 mA
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TDFN EP
Access Time
75 ns
Interface Type
SPI
Minimum Operating Temperature
- 40 C
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.8 V
Write Status Register
instruction according to timing shown in Figure 7. Only bits
2 and 3 can be written using the WRSR command.
SCK
SO
CS
The Status Register is written by sending a WRSR
SI
Dashed Line = mode (1, 1)
SCK
WP
WP
CS
Dashed Line = mode (1, 1)
0
0
0
1
HIGH IMPEDANCE
0
2
0
3
OPCODE
0
4
0
5
Figure 7. WRSR Timing
Figure 8. WP Timing
0
http://onsemi.com
6
1
7
8
t
WPS
MSB
7
8
Write Protection
array and Status Register are inhibited. WP going low while
CS is still low will interrupt a write operation. If the internal
write cycle has already been initiated, WP going low will
have no effect on any write operation to the Status Register
or memory array. The WP input timing is shown in Figure 8.
When WP input is low all write operations to the memory
t
9
6
WPH
10
5
11
4
DATA IN
12
3
13
2
14
1
15
0