M95256-RMC6TG STMicroelectronics, M95256-RMC6TG Datasheet - Page 24
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M95256-RMC6TG
Manufacturer Part Number
M95256-RMC6TG
Description
EEPROM 256kB Serial BUS EE 1.8V to 5.5V ESD
Manufacturer
STMicroelectronics
Datasheet
1.M95256-DFDW6TP.pdf
(53 pages)
Specifications of M95256-RMC6TG
Product Category
EEPROM
Rohs
yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M95256-RMC6TG
Manufacturer:
SMK
Quantity:
266
Part Number:
M95256-RMC6TG
Manufacturer:
ST
Quantity:
20 000
Part Number:
M95256-RMC6TG/12
Manufacturer:
ST
Quantity:
20 000
Instructions
Note:
Figure 14. Page Write (WRITE) sequence
1. Depending on the memory size, as shown in
24/53
S
C
D
S
C
D
The instruction is not accepted, and is not executed, under the following conditions:
●
●
●
●
The self-timed write cycle t
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit is
read as “0” and a programmed bit is read as “1”.
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before),
if a Write cycle is already in progress,
if the device has not been deselected, by driving high Chip Select (S), at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in),
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
7
32
0
6
33
1
5
34
Data Byte 2
2
4
Instruction
35 36 37 38 39 40 41 42
3
3
4
2
5
1
Table
W
6
0
is internally executed as a sequence of two consecutive
Doc ID 12276 Rev 19
7
7
15
5, the most significant address bits are Don’t Care.
8
6
14 13
9 10
5
Data Byte 3
16-Bit Address
4
43
3
44 45 46 47
3
M95256-W M95256-R M95256-DR M95256-DF
20 21 22 23 24 25 26 27
2
2
1
1
0
0
7
6
6
5
Data Byte N
5
Data Byte 1
4
4
3
3
28 29 30
2
2
1
1
0
0
31
AI01796D