M24C32-DFMN6TP STMicroelectronics, M24C32-DFMN6TP Datasheet - Page 29
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M24C32-DFMN6TP
Manufacturer Part Number
M24C32-DFMN6TP
Description
EEPROM 32 Kbit I2C EEProm 4kB 2.5V to 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M24C32-FDW6TP.pdf
(40 pages)
Specifications of M24C32-DFMN6TP
Rohs
yes
Available stocks
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Part Number
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M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
Table 17.
1. If the application uses the device with 2.5 V < V
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
Table 14
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
instead of this table.
DC characteristics (M24C32-X, device grade 5)
Parameter
C
max = 1 MHz (see note
Doc ID 4578 Rev 21
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.6 V V
1.6 V V
1.6 V V
I
(t
Test conditions
c
OL
IN
CC
= 1 MHz
IN
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
= 1.6 V, f
to those in
CC
SS
SS
W
CC
CC
CC
, 1.6 V < V
(2)
< 5.5 V and -20 °C < TA < +85 °C, please refer to
or V
or V
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
(1)
CC
= 400 kHz
CC
in
, V
= 1.6 V
(1)
Table
SS
Table
CC
(in addition
CC
(4)
or V
,
= 1.6 V
< 2.5 V
19)
9)
CC
0.75 V
0.75 V
DC and AC parameters
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
29/40
mA
mA
µA
µA
µA
V
V
V
V