GLS36VF3204-70-4E-EKE Greenliant, GLS36VF3204-70-4E-EKE Datasheet - Page 2

• Manufacturer Part Number: GLS36VF3204-70-4E-EKE
• Description: Flash 2Mx16 or 4Mx8 70ns
• Manufacturer: Greenliant

Specifications of GLS36VF3204-70-4E-EKE

• Rohs: yes
• Data Bus Width: 8 bit, 16 bit
• Memory Type: Flash
• Memory Size: 32 Mbit
• Architecture: Sectored
• Timing Type: Asynchronous
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 15 mA
• Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-48
• Organization: 2 MB x 16, 4 MB x 8

Data Sheet
is less than alternative flash technologies. These devices
also improve flexibility while lowering the cost for program,
data, and configuration storage applications.
SuperFlash technology provides fixed Erase and Program
times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high-density, surface-mount requirements, these
devices are offered in 48-ball TFBGA and 48-lead TSOP
packages. See Figures 2 and 3 for pin assignments.
Device Operation
Memory operation functions are initiated using standard
microprocessor write sequences. A command is written by
asserting WE# low while keeping CE# low. The address
bus is latched on the falling edge of WE# or CE#, which-
ever occurs last. The data bus is latched on the rising edge
of WE# or CE#, whichever occurs first.
Auto Low Power Mode
These devices also have the Auto Lower Power mode
which puts them in a near standby mode within 500 ns after
data has been accessed with a valid Read operation. This
reduces the I
CE# is low, the devices exit Auto Low Power mode with
any address transition or control signal transition used to
initiate another Read cycle, with no access time penalty.
©2010 Greenliant Systems, Ltd.
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active Read current to 4 µA typically. While
2
Concurrent Read/Write Operation
The dual bank architecture of these devices allows the
Concurrent Read/Write operation whereby the user can
read from one bank while programming or erasing in the
other bank. For example, reading system code in one bank
while updating data in the other bank.
Concurrent Read/Write State
Note: For the purposes of this table, write means to perform Block-
Read Operation
The Read operation is controlled by CE# and OE#; both
have to be low for the system to obtain data from the out-
puts. CE# is used for device selection. When CE# is high,
the chip is deselected and only standby power is con-
sumed. OE# is the output control and is used to gate data
from the output pins. The data bus is in a high impedance
state when either CE# or OE# is high. Refer to the Read
cycle timing diagram for further details (Figure 4).
Program Operation
These devices are programmed on a word-by-word or
byte-by-byte basis depending on the state of the BYTE#
pin. Before programming, one must ensure that the sector
which is being programmed is fully erased.
The Program operation is accomplished in three steps:
32 Mbit Concurrent SuperFlash
1. Software Data Protection is initiated using the
2. Address and data are loaded.
3. The internal Program operation is initiated after
three-byte load sequence.
During the Program operation, the addresses are
latched on the falling edge of either CE# or WE#,
whichever occurs last. The data is latched on the
rising edge of either CE# or WE#, whichever
occurs first.
the rising edge of the fourth WE# or CE#, which-
No Operation
No Operation
or Sector-Erase or Program operations as applicable to the
appropriate bank.
Bank 1
Read
Read
Write
Write
GLS36VF3203 / GLS36VF3204
No Operation
No Operation
Bank 2
Write
Read
Read
Write
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