GLS37VF040-70-3C-PHE Greenliant, GLS37VF040-70-3C-PHE Datasheet

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GLS37VF040-70-3C-PHE

Manufacturer Part Number
GLS37VF040-70-3C-PHE
Description
Flash 4M (512Kx8) 70ns Commercial Temp
Manufacturer
Greenliant
Datasheet

Specifications of GLS37VF040-70-3C-PHE

Rohs
yes
Data Bus Width
8 bit
Memory Type
Flash
Memory Size
4 Mbit
Architecture
Non Sectored
Timing Type
Asynchronous
Interface Type
Parallel
Access Time
70 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
12 mA
Operating Temperature
+ 70 C
Mounting Style
Through Hole
Package / Case
PDIP-32
FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• 2.7-3.6V Read Operation
• Superior Reliability
• Low Power Consumption:
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The GLS37VF010/020/040 devices are 128K x8 / 256K x8
/ 512K x8 CMOS, Many-Time Programmable (MTP), low
cost flash, manufactured with high performance Super-
Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturabil-
ity
GLS37VF010/020/040 can be electrically erased and pro-
grammed at least 1000 times using an external program-
mer, e.g., to change the contents of devices in inventory.
The GLS37VF010/020/040 have to be erased prior to pro-
gramming. These devices conform to JEDEC standard
pinouts for byte-wide flash memories.
Featuring
GLS37VF010/020/040 provide a typical Byte-Program
time of 15 µs. Designed, manufactured, and tested for a
wide spectrum of applications, these devices are offered
with an endurance of at least 1000 cycles. Data retention is
rated at greater than 100 years.
The GLS37VF010/020/040 are suited for applications that
require infrequent writes and low power nonvolatile stor-
age. These devices will improve flexibility, efficiency, and
performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
©2010 Greenliant Systems, Ltd.
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
– Active Current: 10 mA (typical)
– Standby Current: 2 µA (typical)
– 70 ns
compared
high
GLS37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories
GLS37VF010 / GLS37VF020 / GLS37VF040
Many-Time Programmable Flash
with
performance
1 Mbit / 2 Mbit / 4 Mbitsn(x8)
alternate
Byte-Program,
approaches.
www.greenliant.com
The
the
• Fast Byte-Program Operation:
• Electrical Erase Using Programmer
• CMOS I/O Compatibility
• JEDEC Standard Byte-wide Flash
• Packages Available
To meet surface mount and conventional through hole
requirements, the GLS37VF010/020/040 are offered in 32-
lead PLCC, 32-lead TSOP, and 32-pin PDIP packages.
See Figures 2, 3, and 4 for pin assignments.
Device Operation
The GLS37VF010/020/040 devices are nonvolatile mem-
ory solutions that can be used instead of standard flash
devices if in-system programmability is not required. It is
functionally (Read) and pin compatible with industry stan-
dard flash products.The device supports electrical Erase
operation via an external programmer.
Read
The Read operation of the GLS37VF010/020/040 is con-
trolled by CE# and OE#. Both CE# and OE# have to be
low for the system to obtain data from the outputs. Once
the address is stable, the address access time is equal to
the delay from CE# to output (T
output after a delay of TOE from the falling edge of OE#,
assuming the CE# pin has been low and the addresses
have been stable for at least T
high, the chip is deselected and a standby current of only 2
µA (typical) is consumed. OE# is the output control and is
– Byte-Program Time: 15 µs (typical)
– Chip Program Time:
– Does not require UV source
– Chip-Erase Time: 100 ms (typical)
EEPROM Pinouts
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
– Non-Pb (lead-free) packages available
2 seconds (typical) for GLS37VF010
4 seconds (typical) for GLS37VF020
8 seconds (typical) for GLS37VF040
CE
CE
-T
). Data is available at the
OE.
When the CE# pin is
S71151-11-000
Data Sheet
05/10

Related parts for GLS37VF040-70-3C-PHE

GLS37VF040-70-3C-PHE Summary of contents

Page 1

... Fast Byte-Program Operation: – Byte-Program Time: 15 µs (typical) – Chip Program Time: 2 seconds (typical) for GLS37VF010 4 seconds (typical) for GLS37VF020 8 seconds (typical) for GLS37VF040 • Electrical Erase Using Programmer – Does not require UV source – Chip-Erase Time: 100 ms (typical) • CMOS I/O Compatibility • ...

Page 2

... GLS37VF010 / GLS37VF020 / GLS37VF040 Product Identification Mode IH. The Product Identification mode identifies the devices as GLS37VF010, GLS37VF020, and GLS37VF040 and man- ufacturer as Greenliant. This mode may be accessed by the hardware method. To activate this mode, the program- ming equipment must force V Two identifier bytes may then be sequenced from the device outputs by toggling address line A on CE# pin ...

Page 3

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 GLS37VF040 GLS37VF020 GLS37VF010 DQ0 DQ0 FIGURE 2: Pin Assignments for 32-lead PLCC GLS37VF040 GLS37VF020 GLS37VF010 A11 A11 A11 A13 A13 A13 A14 ...

Page 4

... V IH Chip-Erase V IL Byte-Program V IL Program/Erase Inhibit X X Product Identification Device ID = C5H for GLS37VF020, C6H for GLS37VF020, and C2H for GLS37VF040 Most significant address for GLS37VF010, A for GLS37VF020, and Note ( case of OE# and A ...

Page 5

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 6

... T Data Retention Latch Up LTH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 =2.7-3. 25°C±5° Limits Min Max Units Test Conditions ...

Page 7

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 AC CHARACTERISTICS TABLE 9: Read Cycle Timing Parameters V Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...

Page 8

... CE PRT ART WE# FIGURE 6: Chip-Erase Timing Diagram ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 OLZ CLZ DATA VALID T VPS T A9S CES OHZ T CHZ HIGH-Z DATA VALID 1151 F03 ...

Page 9

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 ADDRESS CE# DQ 7-0 HIGH OE WE# FIGURE 7: Byte-Program Timing Diagram ©2010 Greenliant Systems, Ltd ADDRESS VALID DATA VALID T VPS T PRT CES 9 Data Sheet CEH VPH 1151 F05 ...

Page 10

... V IHT for inputs and outputs are V (0.5 V) and V IT FIGURE 8: AC Input/Output Reference Waveforms TO DUT FIGURE 9: A Test Load Example ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 V IT REFERENCE POINTS ) for a logic “1” and V (0 ILT DD (0 Input rise and fall times (10% ...

Page 11

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 FIGURE 10: Chip-Erase Algorithm ©2010 Greenliant Systems, Ltd. Start OE CE Erase 100ms pulse (WE WE OE#/ Wait T VR Recovery Time Read Device No Compare all bytes to FF ...

Page 12

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash Data Sheet Address = First Location; Increment Address No *See Figure 10 FIGURE 11: Byte-Program Algorithm ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 Start Erase* OE Load Data CE Program 15 µs pulse (WE Last Address? OE Yes Wait T VR ...

Page 13

... Mbit 010 = 1 Mbit Voltage V = 2.7-3.6V Product Series 37 = Many-Time Programmable Flash 1. Environmental suffix “E” denotes non-Pb solder. Greenliant non-Pb solder devices are “RoHS Compli- ant”. GLS37VF010-70-3C-PHE GLS37VF020-70-3C-PHE GLS37VF040-70-3C-PHE 13 Data Sheet Flash memories with flash pinout S71151-11-000 05/10 ...

Page 14

... All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils. FIGURE 12: 32-lead Plastic Lead Chip Carrier (PLCC) Greenliant Package Code: NH ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 SIDE VIEW .112 .106 .029 .040 .020 R. x 30˚ ...

Page 15

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 Pin # 1 Identifier 12.50 12.30 0.70 0.50 14.20 13.80 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. ...

Page 16

... Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. FIGURE 14: 32-pin Plastic Dual In-line Pins (PDIP) Greenliant Package Code: PH ©2010 Greenliant Systems, Ltd. GLS37VF010 / GLS37VF020 / GLS37VF040 1.655 1.645 .200 .170 .150 ...

Page 17

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 TABLE 11: Revision History Number • 2002 Data Book 02 03 • Part number changes - see page 13 for additional information • Clarified the Test Conditions for V – Address input = V – CE#=OE#=V ILT • 2004 Data Book 04 • ...

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