SST39LF080-55-4C-EIE Microchip Technology, SST39LF080-55-4C-EIE Datasheet - Page 6

• Manufacturer Part Number: SST39LF080-55-4C-EIE
• Description: Flash 1M X 8 55ns
• Manufacturer: Microchip Technology

Specifications of SST39LF080-55-4C-EIE

• Product Category: Flash
• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: NAND Flash
• Memory Size: 8 Mbit
• Architecture: Sectored
• Interface Type: Parallel
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 20 mA
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-40
• Organization: 1 MB x 8

EOL Data Sheet
TABLE 2: P
TABLE 3: O
©2007 Silicon Storage Technology, Inc.
Symbol
A
DQ
CE#
OE#
WE#
V
V
NC
Mode
Read
Program
Erase
Standby
Write Inhibit
Product Identification
Software Mode
MS
DD
SS
1. A
1. X can be V
7
1
-DQ
-A
A
MS
MS
0
0
= Most significant address
= A
19
for SST39LF/VF080
IN
Pin Name
Address Inputs
Data Input/output
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
PERATION
IL
or V
D
ESCRIPTION
IH
, but no other value.
M
ODES
S
Functions
To provide memory addresses. During Sector-Erase A
sector. During Block-Erase A
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage:
Unconnected pins.
CE#
ELECTION
V
V
V
V
V
X
X
IH
IL
IL
IL
IL
OE#
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
WE#
V
V
V
V
V
X
X
IH
IH
IH
IL
IL
6
DQ
D
D
X
High Z
High Z/ D
High Z/ D
MS
1
OUT
IN
-A
16
address lines will select the block.
3.0-3.6V for SST39LF080
2.7-3.6V for SST39VF080
OUT
OUT
8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
Address
A
A
Sector or Block address,
XXH for Chip-Erase
X
X
X
See Table 4
IN
IN
MS
-A
12
address lines will select the
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T3.4 1146
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