SST39SF512-90-4C-NH Microchip Technology, SST39SF512-90-4C-NH Datasheet - Page 7

• Manufacturer Part Number: SST39SF512-90-4C-NH
• Description: Flash
• Manufacturer: Microchip Technology

Specifications of SST39SF512-90-4C-NH

• Product Category: Flash
• Data Bus Width: 8 bit
• Memory Type: NAND Flash
• Memory Size: 512 Kbit
• Architecture: Sectored
• Interface Type: Parallel
• Access Time: 90 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 50 mA
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: PLCC-32
• Organization: 64 KB x 8

512 Kbit Multi-Purpose Flash
SST39SF512
TABLE 4: S
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Voltage on A
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current
O
AC C
©2003 Silicon Storage Technology, Inc.
Command
Sequence
Byte-Program
Sector-Erase
Chip-Erase
Software ID Entry
Software ID Exit
Software ID Exit
Range
Commercial
Industrial
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 13 and 14
PERATING
1. Address format A
2. BA = Program Byte address
3. SA
4. The device does not remain in Software Product ID mode if powered down.
5. With A
6. Both Software ID Exit operations are equivalent
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
A
A
ONDITIONS OF
MS
MS
X
for Sector-Erase; uses A
= Most significant address
= A
MS
15
R
-A
9
ANGE
for SST39SF512
OFTWARE
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
1
6
6
= 0; SST Manufacturer’s ID = BFH, is read with A
4,5
14
T
SST39SF512 Device ID = B4H, is read with A
-A
EST
Ambient Temp
-40°C to +85°C
5555H
5555H
5555H
5555H
5555H
Addr
0
0°C to +70°C
Write Cycle
XXH
C
(Hex), Address A
1st Bus
OMMAND
1
1
MS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Data
AAH
AAH
AAH
AAH
AAH
F0H
-A
12
address lines
S
EQUENCE
2AAAH
2AAAH
2AAAH
2AAAH
2AAAH
Addr
L
L
15
Write Cycle
= 30 pF for 70 ns
= 100 pF for 90 ns
2nd Bus
can be V
1
4.5-5.5V
4.5-5.5V
V
DD
Data
55H
55H
55H
55H
55H
IL
or V
IH
5555H
5555H
5555H
5555H
5555H
Addr
, but no other value, for the Command sequence.
Write Cycle
3rd Bus
0
7
0
= 0,
1
= 1
Data
A0H
F0H
80H
80H
90H
5555H
5555H
Addr
Write Cycle
BA
4th Bus
2
1
Data
Data
AAH
AAH
2AAAH
2AAAH
Addr
Write Cycle
5th Bus
1
Data
55H
55H
S71149-05-000
5555H
Addr
SA
Write Cycle
Data Sheet
6th Bus
X
3
1
DD
DD
T4.3 1149
+0.5V
+2.0V
Data
30H
10H
11/03