MAX9969BDCCQ+TD Maxim Integrated, MAX9969BDCCQ+TD Datasheet - Page 2

• Manufacturer Part Number: MAX9969BDCCQ+TD
• Description: Interface - Specialized
• Manufacturer: Maxim Integrated
• Series: MAX9969r

Specifications of MAX9969BDCCQ+TD

• Product Type: ATE Driver/Comparator
• Maximum Operating Temperature: + 70 C
• Package / Case: TQFP-100 EP
• Minimum Operating Temperature: 0 C

ABSOLUTE MAXIMUM RATINGS
V
V
V
GS to GND .............................................................................±1V
DUT_ to GND.......................................................-2.75V to +7.5V
LDH_, LDL_ to GND .................................................-0.3V to +6V
DATA_, NDATA_, RCV_, NRCV_, LDEN_,
DATA_ to NDATA_, RCV_ to NRCV_,
TDATA_, TRCV_, TLDEN_ to GND ...........................-2.5V to +5V
DATA_, NDATA_, to TDATA_.................................................±2V
RCV_, NRCV_, to TRCV_ .......................................................±2V
LDEN_, NLDEN_ to TLDEN_..................................................±2V
V
SCLK, DIN,
Dual, Low-Power, 1200Mbps ATE
Driver/Comparator with 35mA Load
*Dissipation wattage values are based on still air with no heat sink. Actual maximum power dissipation is a function of heat extraction
technique and may be substantially higher.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
+85°C, unless otherwise noted. All temperature coefficients are measured at T
2
POWER SUPPLIES
Positive Supply
Negative Supply
Positive Supply Current (Note 2)
Negative Supply Current (Note 2)
Power Dissipation (Notes 2, 3)
DUT_ CHARACTERISTICS
Operating Voltage Range
Leakage Current in
High-Impedance Mode
Leakage Current in
Low-Leakage Mode
CC
EE
CC
CCO_
CC
NLDEN_ to GND...................................................-2.5V to +5V
LDEN_ to NLDEN_ ..........................................................±1.5V
to GND..........................................................-5.75V to +0.3V
_______________________________________________________________________________________
to GND ............................................................-0.3V to +11V
- V
= +9.75V, V
to GND ..........................................................-0.3V to +5V
EE
...........................................................-0.3V to +16.75V
PARAMETER
CS, RST to GND ......................................-1V to +5V
EE
= -4.75V, V
CCO_
SYMBOL
= +2.5V, SC1 = SC0 = 0, V
V
V
I
V
I
DUT
I
P
DUT
CC
EE
CC
EE
D
V
V
V
driver = high impedance
V
V
V
driver = high impedance
V
V
V
driver = high impedance
(Note 4)
LLEAK = 0; V
LLEAK = 1; V
LDH
LDH
COM
LDH
LDH
COM
LDH
LDH
COM
_ = V
_ = V
_ = V
_ = V
_ = V
_ = V
_ = 1.5V, load enabled,
_ = -1V, load enabled,
_ = 1.5V, load enabled,
LDL
LDL
LDL
LDL
LDL
LDL
DUT
DUT
_ = 0, R
_ = 3.5V, R
_ = 0, R
_ = 3.5V, R
_ = 0
_ = 3.5V, R
CONDITIONS
CPHV_
_ = -1.5V, 0, +3V, +6.5V
_ = -1.5V, 0, +3V, +6.5V
DHV_, DLV_, DTV_, CHV_, CLV_,
CPHV_ to GND .........................................................-1V to +8.5V
CPLV_ to GND..........................................................-3.5V to +6V
DHV_ to DLV_ ......................................................................±10V
DHV_ to DTV_ ......................................................................±10V
DLV_ to DTV_.......................................................................±10V
CHV_ or CLV_ to DUT_ ........................................................±10V
CH_, NCH_, CL_, NCL_ to GND..................................-1V to +5V
All Other Pins to GND ......................(V
TEMP Current...................................................-0.5mA to +20mA
DUT_ Short Circuit to -1.5V to +6.5V..........................Continuous
Continuous Power Dissipation (T
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature .....................................................+125°C
L
L
COM_ to GND ...................................................-2.5V to +7.5V
MAX9969_ _CCQ (derate 167mW/°C above +70°C) ...13.3W*
= +7.2V, V
≥ 10MΩ
≥ 10MΩ
L
L
L
= 0,
= 0,
= 0,
J
= +60°C to +100°C, unless otherwise noted.) (Note 1)
CPLV_
= -2.2V, V
-5.25
MIN
-1.5
9.5
LDH
A
= +70°C)
_ = V
-4.75
TYP
9.75
-235
-315
165
245
EE
2.8
3.3
LDL
- 0.3V) to (V
_ = 0, V
MAX
-4.50
10.5
-260
-350
+6.5
185
275
±15
3.2
3.7
±3
GS
CC
= 0, T
UNITS
+ 0.3V)
mA
mA
µA
nA
W
V
V
V
J
=