MC100EPT26DT ON Semiconductor, MC100EPT26DT Datasheet - Page 4

• Manufacturer Part Number: MC100EPT26DT
• Description: Translation - Voltage Levels 1
• Manufacturer: ON Semiconductor
• Type: LVDS/LVPECL to LVTTLr

Specifications of MC100EPT26DT

• Product Category: Translation - Voltage Levels
• Propagation Delay Time: 2 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 100

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
5. Measured with a 750 mV 50% duty−cycle clock source. R
6. Reference (V
7. Skews are measured between outputs under identical transitions.
Table 5. TTL OUTPUT DC CHARACTERISTICS
Table 6. AC CHARACTERISTICS
Symbol
Symbol
V
V
I
I
I
f
t
t
t
t
t
t
V
t
t
CCH
CCL
OS
max
PLH
PHL
SK+ +
SK−−
SKPP
JITTER
r
f
OH
OL
PP
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Output HIGH Voltage
Output LOW Voltage
Power Supply Current
Power Supply Current
Output Short Circuit Current
Maximum Frequency (Figure 2)
Propagation Delay to
Output Differential (Note 6)
Within Device Skew++
Within Device Skew− −
Device−to−Device Skew (Note 7)
Random Clock Jitter (RMS) (Figure 2)
Input Voltage Swing (Differential Configuration)
Output Rise/Fall Times
(0.8V − 2.0V)
CC
= 3.3 V ± 5%; GND = 0 V)
Characteristic
Characteristic
3.0
2.0
1.0
0.0
0
V
Figure 2. Typical V
OL
V
 0.5 V
CC
@ v 200 MHz
@ > 200 MHz
= 3.0 V to 3.6 V; GND = 0.0 V (Note 5)
Q, Q
100
V
CC
http://onsemi.com
FREQUENCY (MHz)
OH
L
= 3.3 V; GND = 0.0 V; T
Min
275
150
330
1.2
1.2
= 500 W to GND and C
/ Jitter versus Frequency (255C)
I
I
OH
OL
JITTER
= 24 mA
= −3.0 mA
−40°C
4
Typ
350
100
800
600
1.5
1.5
15
20
20
6
V
Condition
OH
1200
Max
500
275
950
2.0
1.8
60
85
30
200
Min
275
150
330
1.2
1.2
L
A
= 20 pF to GND. Refer to Figure 3.
= −40°C to 85°C
25°C
Typ
350
100
800
600
1.5
1.5
15
20
40
6
Min
−50
2.4
10
15
1200
Max
500
275
950
2.0
1.8
60
85
30
300
12
8
4
0
Min
275
150
330
Typ
1.3
1.2
25
34
85°C
Typ
350
100
170
800
650
1.7
1.5
20
30
6
−150
Max
0.5
35
40
1200
Max
500
275
950
2.2
1.8
85
85
30
MHz
Unit
Unit
mA
mA
mA
mV
ns
ps
ps
ps
V
V