25AA010A-I/P Microchip Technology, 25AA010A-I/P Datasheet - Page 11
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
25AA010A-I/P
Manufacturer Part Number
25AA010A-I/P
Description
IC EEPROM 1KBIT 10MHZ 8DIP
Manufacturer
Microchip Technology
Datasheet
1.25LC010AT-IOT.pdf
(30 pages)
Specifications of 25AA010A-I/P
Memory Size
1K (128 x 8)
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Speed
10MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Clock Frequency
10MHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
DIP
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC (15-Dec-2010)
Package /
RoHS Compliant
Memory Configuration
128 X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
25AA010A-I/P
Manufacturer:
MICROCHIP
Quantity:
12 000
2.6
The Write Status Register instruction (WRSR) allows the
user to write to the nonvolatile bits in the STATUS
register as shown in Table 2-2. See Figure 2-7 for the
WRSR timing sequence. Four levels of protection for the
array are selectable by writing to the appropriate bits in
the STATUS register. The user has the ability to write-
protect none, one, two or all four of the segments of the
array as shown in Table 2-3.
FIGURE 2-7:
© 2008 Microchip Technology Inc.
SCK
Note:
CS
SO
SI
Write Status Register Instruction
(WRSR)
An internal write cycle (T
sequence.
0
0
0
WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
1
0
Instruction
2
0
3
WC
0
) is initiated on the rising edge of CS after a valid write STATUS register
4
0
5
High-Impedance
0
6
1
7
25AA010A/25LC010A
TABLE 2-3:
7
8
BP1
0
0
1
1
6
9
Data to STATUS Register
10
5
11
4
ARRAY PROTECTION
BP0
0
1
0
1
12
3
13
2
Array Addresses
Write-Protected
(60h-7Fh)
(40h-7Fh)
(00h-7Fh)
14
upper 1/4
upper 1/2
1
DS21832E-page 11
none
all
15
0