HVLED807PF STMicroelectronics, HVLED807PF Datasheet - Page 10
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HVLED807PF
Manufacturer Part Number
HVLED807PF
Description
LED Lighting Drivers Off-Line LED 800V 11Ohm 0.9 High Volt
Manufacturer
STMicroelectronics
Datasheet
1.HVLED807PFTR.pdf
(18 pages)
Specifications of HVLED807PF
Rohs
yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HVLED807PFTR
Manufacturer:
ST
Quantity:
20 000
Electrical specifications
Note:
10/18
Table 5.
1. Vcc=14 V (unless otherwise specified).
2. Limits are production tested at Tj=Ta=25 °C, and are guaranteed by statistical characterization in the range
3. Not production tested, guaranteed statistical characterization only.
4. Parameters tracking each other (in the same section).
5. Guaranteed by design.
Figure 5.
The measured IDSS is the sum between the current across the startup resistor and the
effective
Current reference
Current sense
V
Symbol
V
Tj -25 to +125 °C.
V
COMPBM
V
V
V
I
COMPH
COMP
COMPL
V
Hys
t
ILEDx
CLED
CSdis
LEB
T
CSx
D
DMG
MOSFET’s
Electrical characteristics
OFF-state drain and source current test circuit
2.5V
Source current
Sink current
Upper COMP voltage
Lower COMP voltage
Burst-mode threshold
Burst-mode hysteresis
Maximum value
Current reference voltage
Leading-edge blanking
Delay-to-output (H-L)
Max. clamp value
Hiccup-mode OCP level
OFF-state drain current.
+
-
Parameter
COMP
Doc ID 023464 Rev 4
VDD
ILED
(1) (2)
V
V
V
V
V
V
V
(5)
(4)
(4)
DMG
COMP
DMG
COMP
DMG
DMG
COMP
14V
dVcs/dt = 200 mV/µs
GND
Test condition
(continued)
CURRENT
CONTROL
= 2.3 V,
= 2.7 V,
= 2.3 V
= 2.7 V
= 1.65 V
= 1.65 V
= V
COMPL
CS
SOURCE
DRAIN
A
0.192
Min.
0.92
400
1.5
0.7
70
Idss
Typ.
0.75
100
750
330
2.7
0.7
1.6
0.2
65
90
1
1
HVLED807PF
0.208
Max.
1.08
200
1.7
0.8
AM13211v1
Unit
mV
µA
µA
ns
ns
V
V
V
V
V
V
V
Vin
750V