VND5T100AJ-E STMicroelectronics, VND5T100AJ-E Datasheet - Page 21

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VND5T100AJ-E

Manufacturer Part Number
VND5T100AJ-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 58V 100mOhm 22A
Manufacturer
STMicroelectronics
Datasheet

Specifications of VND5T100AJ-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
Number Of Outputs
2
On Resistance (max)
100 mOhms
On Time (max)
27 us
Off Time (max)
38 us
Operating Supply Voltage
8 V to 36 V
Supply Current (max)
6 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerSSO-12
Current Limit
22 A
Minimum Operating Temperature
- 40 C
Output Current
16 A

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VND5T100AJ-E
3
3.1
3.1.1
Application information
Figure 24. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This solution can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests Solution 2 is used (see below).
D
GND
= (-V
R
R
produces a shift (I
GND
GND
GND
CC
)
≤ 600 mV / (I
≥ (−V
2
is the DC reverse ground pin current and can be found in the absolute
/ R
GND
CC
) / (-I
GND
GND
S(on)max
S(on)max
(when V
)
Doc ID 018513 Rev 1
GND
).
* R
CC
GND
.
< 0: during reverse battery situations) is:
) in the input thresholds and the status output
GND
GND
S(on)max
only)
resistor.
becomes the sum of the
Application information
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