25AA512-I/SN Microchip Technology, 25AA512-I/SN Datasheet

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25AA512-I/SN

Manufacturer Part Number
25AA512-I/SN
Description
IC EEPROM 512KBIT 20MHZ 8SOIC
Manufacturer
Microchip Technology
Datasheet

Specifications of 25AA512-I/SN

Memory Size
512K (64K x 8)
Package / Case
8-SOIC (3.9mm Width)
Operating Temperature
-40°C ~ 85°C
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Speed
20MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Organization
64 K x 8
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Access Time
250 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
7 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
1.8 V, 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
25AA512-I/SN
Manufacturer:
MICROCHIP
Quantity:
6 600
Part Number:
25AA512-I/SN
Manufacturer:
MCP
Quantity:
313
Part Number:
25AA512-I/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
25AA512-I/SN
Manufacturer:
MICROCHIP
Quantity:
6 600
Part Number:
25AA512-I/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Device Selection Table
Features:
• 20 MHz max. Clock Speed
• Byte and Page-level Write Operations:
• Low-Power CMOS Technology:
• Electronic Signature for Device ID
• Self-Timed Erase and Write cycles:
• Sector Write Protection (16K byte/sector):
• Built-In Write Protection:
• High Reliability:
• Temperature Ranges Supported:
• Pb-free and RoHS Compliant
Pin Function Table
 2010 Microchip Technology Inc.
CS
SO
WP
V
SI
SCK
HOLD
V
- 128-byte page
- 5 ms max.
- No page or sector erase required
- Max. Write Current: 5 mA at 5.5V, 20 MHz
- Read Current: 10 mA at 5.5V, 20 MHz
- Standby Current: 1A at 2.5V (Deep power-
- Page Erase (5 ms, typical)
- Sector Erase (10 ms/sector, typical)
- Bulk Erase (10 ms, typical)
- Protect none, 1/4, 1/2 or all of array
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- Endurance: 1 Million erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000V
- Industrial (I): -40°C to +85°C
SS
CC
Part Number
down)
Name
25AA512
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
512 Kbit SPI Bus Serial EEPROM
V
CC
1.8-5.5V
Function
Range
Page Size
128 Byte
Description:
The Microchip Technology Inc. 25AA512 is a 512 Kbit
serial EEPROM memory with byte-level and page-level
serial EEPROM functions. It also features Page, Sector
and Chip erase functions typically associated with
Flash-based products. These functions are not required
for byte or page write operations. The memory is
accessed via a simple Serial Peripheral Interface (SPI)
compatible serial bus. The bus signals required are a
clock input (SCK) plus separate data in (SI) and data out
(SO) lines. Access to the device is controlled by a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25AA512 is available in standard packages includ-
ing 8-lead PDIP, SOIC, and advanced 8-lead DFN
package. All packages are Pb-free and RoHS
compliant.
Package Types (not to scale)
V
WP
SO
CS
SS
Temp. Ranges
1
2
3
4
I
DFN
(MF)
8
7
6
5
25AA512
V
HOLD
SCK
SI
CC
P, SN, SM, MF
V
WP
SO
CS
SS
Packages
PDIP/SOIC/SOIJ
1
2
3
4
(P, SN, SM)
DS22021F-page 1
8
7
6
5
V
HOLD
SCK
SI
CC

Related parts for 25AA512-I/SN

25AA512-I/SN Summary of contents

Page 1

... Temp. Ranges 128 Byte I Description: The Microchip Technology Inc. 25AA512 is a 512 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations ...

Page 2

... ELECTRICAL CHARACTERISTICS (†) Absolute Maximum Ratings V .............................................................................................................................................................................6.5V CC All inputs and outputs w.r.t. V ......................................................................................................... -0. Storage temperature .................................................................................................................................-65°C to 150°C Ambient temperature under bias ...............................................................................................................-40°C to 125°C ESD protection on all pins ..........................................................................................................................................4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device ...

Page 3

... V — 250 ns 2.0  — ns (Note 1) 25AA512 V = 1. 2.0V to 5.5V CC Conditions 5.5 CC 5.5 CC <2.5 at 0°C to +85°C CC <2.5 at -40°C to +85°C CC 5.5 CC 5.5 CC < ...

Page 4

... TABLE 1-2: AC CHARACTERISTICS (CONTINUED) AC CHARACTERISTICS Param. Sym. Characteristic No Output disable time DIS 16 T HOLD setup time HOLD hold time HOLD low to output HZ High HOLD high to output HV valid High to Standby REL mode High to Deep power- PD down 22 T Chip erase cycle time ...

Page 5

... FIGURE 1-1: HOLD TIMING SCK 18 High-Impedance Don’t Care HOLD FIGURE 1-2: SERIAL INPUT TIMING CS 2 Mode 1,1 Mode 0,0 SCK MSB in SO  2010 Microchip Technology Inc. — (Note 1) (Note 2) — High-Impedance 25AA512 High-Impedance Don’t Care LSB in DS22021F-page 5 ...

Page 6

... FIGURE 1-3: SERIAL OUTPUT TIMING SCK 13 MSB out SO SI DS22021F-page 6 14 Don’t Care 3 Mode 1,1 Mode 0,0 15 LSB out  2010 Microchip Technology Inc. ...

Page 7

... CS goes low. If the clock line is shared with other peripheral devices on the SPI bus, the user can assert the HOLD input and place the 25AA512 in ‘HOLD’ mode. After releasing the HOLD pin, operation will resume from the point when the HOLD was asserted. ...

Page 8

... Read Sequence The device is selected by pulling CS low. The 8-bit READ instruction is transmitted to the 25AA512 fol- lowed by the 16-bit address. After the correct READ instruction and address are sent, the data stored in the memory at the selected address is shifted out on the SO pin. The data stored in the memory at the next ...

Page 9

... Write Sequence Prior to any attempt to write data to the 25AA512, the write enable latch must be set by issuing the WREN instruction (Figure 2-4). This is done by setting CS low and then clocking out the proper instruction into the 25AA512. After all eight bits of the instruction are trans- mitted, the CS must be brought high to set the write enable latch ...

Page 10

... FIGURE 2-3: PAGE WRITE SEQUENCE SCK Instruction SCK Data Byte DS22021F-page 16-bit Address Data Byte Data Byte Data Byte n (128 max  2010 Microchip Technology Inc. ...

Page 11

... Write Enable (WREN) and Write Disable (WRDI) The 25AA512 contains a write enable latch. Table 2-4 for the Write-Protect Functionality Matrix. This latch must be set before any write operation will be completed internally. The WREN instruction will set the latch, and the WRDI will reset the latch. ...

Page 12

... X X BP1 BP0 W/R = writable/readable read-only. The Write-In-Process (WIP) bit indicates whether the 25AA512 is busy with a write operation. When set ‘ ’, a write is in progress, when set to a ‘ in progress. This bit is read-only. FIGURE 2-6: READ STATUS REGISTER TIMING SEQUENCE (RDSR) ...

Page 13

... Array Addresses Write-Protected none Upper 1/4 (Sector 3) (C000h-FFFFh) Upper 1/2 (Sectors 2 & 3) (8000h-FFFFh) All (Sectors & 3) (0000h-FFFFh Data to STATUS Register High-Impedance 25AA512 Array Addresses Unprotected All (Sectors & 3) (0000h-FFFFh) Lower 3/4 (Sectors 0, 1 & 2) (0000h-BFFFh) Lower 1/2 (Sectors 0 & 1) (0000h-7FFFh) none DS22021F-page 13 ...

Page 14

... DS22021F-page 14 2.7 Power-On State The 25AA512 powers on in the following state: • The device is in low-power Standby mode ( • The write enable latch is reset • high-impedance state • A high-to-low-level transition required to enter active state Protected Blocks ...

Page 15

... A Write Enable (WREN) instruc- tion must be given prior to attempting a PAGE ERASE. This is done by setting CS low and then clocking out the proper instruction into the 25AA512. After all eight bits of the instruction are transmitted, the CS must be brought high to set the write enable latch. ...

Page 16

... A Write Enable (WREN) instruction must be given prior to attempting a SECTOR ERASE. This is done by setting CS low and then clock- ing out the proper instruction into the 25AA512. After all eight bits of the instruction are transmitted, the CS must be brought high to set the write enable latch. ...

Page 17

... A Write Enable (WREN) instruction must be given prior to executing a CHIP ERASE. This is done by setting CS low and then clocking out the proper instruction into the 25AA512. After all eight bits of the instruction are transmitted, the CS must be brought high to set the write enable latch. ...

Page 18

... DEEP POWER-DOWN MODE Deep Power-Down mode of the 25AA512 is its lowest power consumption state. The device will not respond to any of the Read or Write commands while in Deep Power-Down mode, and therefore it can be used as an additional software write protection feature. The Deep Power-Down mode is entered by driving CS low, followed by the instruction code (Figure 2-11) onto the SI line, followed by driving CS high ...

Page 19

... If additional clock cycles are sent after the electronic signature has been read once, it will continue to output the signature on the SO line until the sequence is terminated 16-bit Address High-Impedance 25AA512 Electronic Signature Out Manufacturer’ 0x29 that occurs before the device REL T REL ...

Page 20

... After power- up, a low level required prior to any sequence being initiated. 3.2 Serial Output (SO) The SO pin is used to transfer data out of the 25AA512. During a read cycle, data is shifted out on this pin after the falling edge of the serial clock. 3.3 Write-Protect (WP) ...

Page 21

... Part number or part number code Temperature (I) Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code (2 characters for small packages) Pb-free JEDEC designator for Matte Tin (Sn) 25AA512 DS22021F-page 21 ...

Page 22

... PP %RG\ >')16@ 1RWH NOTE TOP VIEW A3 1RWHV DS22021F-page EXPOSED PAD BOTTOM VIEW A A1 NOTE NOTE  2010 Microchip Technology Inc. ...

Page 23

... Microchip Technology Inc. 25AA512 DS22021F-page 23 ...

Page 24

... PLO %RG\ >3',3@ 1RWH N NOTE 1RWHV DS22021F-page  2010 Microchip Technology Inc. ...

Page 25

... PP %RG\ >62,&@ 1RWH N NOTE 1RWHV  2010 Microchip Technology Inc φ 25AA512 α c β DS22021F-page 25 ...

Page 26

... PP %RG\ >62,&@ 1RWH DS22021F-page 26  2010 Microchip Technology Inc. ...

Page 27

... Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2010 Microchip Technology Inc. 25AA512 DS22021F-page 27 ...

Page 28

... Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22021F-page 28  2010 Microchip Technology Inc. ...

Page 29

... Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2010 Microchip Technology Inc. 25AA512 DS22021F-page 29 ...

Page 30

... APPENDIX A: REVISION HISTORY Revision A Original release. Revision B (06/2007) Revised Device Selection Table; Revised Features section; Revised Table 1-1 DC Characteristics; Revised Table 1-2 AC Characteristics; Replaced Pack- age Drawings (Rev. AP); Revised Package Marking (SOIC, SOIJ); Revised Product ID section. Revision C (10/2007) Removed 25LC512 part number; New data sheet created for 25LC512 (DS22065) ...

Page 31

... Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of this document. Technical support is available through the web site at: http://support.microchip.com Preliminary 25AA512 should contact their distributor, DS22021F-page 31 ...

Page 32

... Telephone: (_______) _________ - _________ Application (optional): Would you like a reply? Y Device: 25AA512 Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs you find the organization of this document easy to follow? If not, why? 4 ...

Page 33

... Examples: a) Package b) c) 25AA512 . 25AA512-I/SN = 512 Kbit, 1.8V Serial EEPROM, Industrial temp., SOIC package 25AA512T-I/SM = 512 Kbit, 1.8V Serial EEPROM, Industrial temp., Tape & Reel, SOIJ package 25AA512T-I/MF = 512 Kbit, 1.8V Serial EEPROM, Industrial temp., Tape & Reel, DFN package ...

Page 34

... NOTES: DS22021F-page 34  2010 Microchip Technology Inc. ...

Page 35

... PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. ...

Page 36

... Fax: 886-3-6578-370 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350  2010 Microchip Technology Inc. EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 ...

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