VND5T100AJTR-E STMicroelectronics, VND5T100AJTR-E Datasheet - Page 22

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VND5T100AJTR-E

Manufacturer Part Number
VND5T100AJTR-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 58V 100mOhm 22A
Manufacturer
STMicroelectronics
Datasheet

Specifications of VND5T100AJTR-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
Operating Supply Voltage
8 V to 36 V

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Application information
3.1.2
3.2
3.3
22/32
Solution 2: diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and in the status output values, if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/2 table.
MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
the control pins are pulled negative. ST suggests that a resistor (R
prevent the microcontroller I/O pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
Calculation example:
For V
30 kΩ ≤ R
Recommended R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
/I
latchup
prot
= -600 V and I
GND
≤ 180 kΩ.
≤ R
= 4.7 kΩ) should be inserted in parallel to D
prot
prot
value is 60 kΩ.
≤ (V
GND
latchup
OHμC
Doc ID 018513 Rev 1
) in the ground line
-V
≥ 20 mA; V
IH
-V
GND
) / I
OHμC
IHmax
≥ 4.5 V
GND
if the device drives an
prot
) be inserted in line to
VND5T100AJ-E
CC
CC
line,
line

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