SI3863BDV-T1-E3 Vishay/Siliconix, SI3863BDV-T1-E3 Datasheet

SI3863BDV-T1-E3

Manufacturer Part Number

SI3863BDV-T1-E3

Description

Power Switch ICs - Power Distribution 12V 2.5A 0.83W

Manufacturer

Vishay/Siliconix

Datasheet

1.SI3863BDV-T1-E3.pdf (10 pages)

Specifications of SI3863BDV-T1-E3

Product Category

Power Switch ICs - Power Distribution

Rohs

yes

Number Of Outputs

On Resistance (max)

0.11 Ohms

Operating Supply Voltage

2.5 V to 12 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSOP-6

Maximum Power Dissipation

830 mW

Minimum Operating Temperature

- 55 C

Output Current

2.5 A

Factory Pack Quantity

3000

Part # Aliases

SI3863BDV-E3

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3863BDV-T1-E3

Manufacturer:

VISHAY

Quantity:

3 031

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Document Number: 73343

S09-2110-Rev. B, 12-Oct-09

Note:

* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

DESCRIPTION

The Si3861BDV includes a P- and N-Channel MOSFET in a

single TSOP-6 package. The low on-resistance P-Channel

TrenchFET

N-Channel, with an external resistor, can be used as a level-

APPLICATION CIRCUITS

ON/OFF

PRODUCT SUMMARY

COMPONENTS

4.5 to 20

DS2

Optional Slew-Rate Control

(V)

Pull-Up Resistor

is tailored for use as a load switch. The

0.120 at V

0.145 at V

0.075 at V

Si3861BDV

DS(on)

(Ω)

= 5.0 V

= 4.5 V

= 10 V

Load Switch with Level-Shift

2, 3

Typical 10 kΩ to 1 mΩ*

Typical 0 to 100 kΩ*

Typical 1000 pF

± 1.9

± 1.7

± 2.3

(A)

GND

LOAD

OUT

FEATURES

The Si3861BDV is ideally suited for high-side load switching

in portable applications. The integrated N-Channel level-shift

device saves space by reducing external components. The

slew rate is set externally so that rise-times can be tailored to

different load types.

shift to drive the P-Channel load-switch. The N-Channel

MOSFET has internal ESD protection and can be driven by

logic signals as low as 1.5 V. The Si3861DV operates on

supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.

• Halogen-free According to IEC 61249-2-21

• 4.5 V Rated

• ESD Protected: 3000 V

• 105 mΩ Low R

• 4.5 V to 20 V Input

• 1.5 V to 8 V Logic Level Control

• Low Profile, Small Footprint TSOP-6 Package

• 3000 V ESD Protection On Input Switch, V

• Adjustable Slew-Rate

• Compliant to RoHS Directive 2002/95/EC

Definition

Note: For R2 switching variations with other V

DS(on)

combinations See Typical Characteristics

d(off)

d(on)

TrenchFET

R2 (kΩ)

Vishay Siliconix

Si3861BDV

ON/OFF

= 1 A

= 10 µF

= 1 µF

www.vishay.com

ON/OFF

= 3 V

/R1

Related parts for SI3863BDV-T1-E3

SI3863BDV-T1-E3 Summary of contents

Page 1

Load Switch with Level-Shift PRODUCT SUMMARY V (V) R (Ω) DS2 DS(on) 0.075 0.120 5 0.145 4 DESCRIPTION The Si3861BDV includes ...

Si3861BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM TSOP-6 Top View Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free) Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Input Voltage ON/OFF Voltage Load Current a Continuous Intrinsic Diode ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0. 1 0.45 ON/OFF 0.40 0.35 0. 125 C J 0.25 0.20 T 0.15 0.10 0.05 0. (A) L ...

Page 4

Si3861BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 1 1.4 1.2 1.0 0 ON/OFF 0.2 0.0 - 100 - ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified ...

Page 6

TSOP: 5/6−LEAD JEDEC Part Number: MO-193C 5-LEAD TSOP D 0.08 C Dim ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec- 0.15 M ...

Page 7

Mounting LITTLE FOOT Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, ...

Page 8

AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted ...

Page 9

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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