SI3863DV-T1-E3 Vishay/Siliconix, SI3863DV-T1-E3 Datasheet

SI3863DV-T1-E3

Manufacturer Part Number

SI3863DV-T1-E3

Description

Power Switch ICs - Power Distribution 12V 2.5A 0.83W

Manufacturer

Vishay/Siliconix

Datasheet

1.SI3863DV-T1-E3.pdf (6 pages)

Specifications of SI3863DV-T1-E3

Product Category

Power Switch ICs - Power Distribution

Rohs

yes

Number Of Outputs

On Resistance (max)

0.135 Ohms

Operating Supply Voltage

2.5 V to 12 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSOP-6

Maximum Power Dissipation

830 mW

Minimum Operating Temperature

- 55 C

Output Current

2.5 A

Factory Pack Quantity

3000

Part # Aliases

SI3863DV-E3

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The Si3863DV includes a p- and n-channel MOSFET in a

single TSOP-6 package. The low on-resistance p-channel

TrenchFET

n-channel, with an external resistor, can be used as a

Document Number: 70866

S-60514—Rev. A, 5-Apr-99

*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

ON/OFF

2 5

2.5 to 12

105-m

2.5 to 12

1.5 to 8

DS2

(V)

-V Logic Level Control

Optional Slew-Rate Control

-V Input

Low r

Pull-Up Resistor

is tailored for use as a load switch.

DS(on)

Si3863DV

0.105 @ V

0.125 @ V

0.165 @ V

TrenchFET

DS(on)

( )

= 4.5 V

= 3.0 V

= 2.5 V

Load Switch with Level-Shift

2, 3

Typical 10 k

Typical 0 to 100 k *

Typical 1000 pF

to 1 m *

GND

New Product

LOAD

OUT

(A)

2.5

2.1

1.8

The

level-shift to drive the p-channel load-switch. The n-channel

MOSFET has internal ESD protection and can be driven by

logic signals as low as 1.5-V. The Si3863DV operates on

supply lines from 2.5 to 12-V, and can drive loads up to 2.5 A.

The Si3863DV is ideally suited for high-side load switching in

portable applications. The integrated n-channel level-shift

device saves space by reducing external components. The

slew rate is set externally so that rise-times can be tailored to

different load types.

Low Profile, Small Footprint TSOP-6 Package

3000-V ESD Protection On Input Switch, V

Adjustable Slew-Rate

Note: For R2 switching variations with other V

combinations See Typical Characteristics

R2 @ V

Switching Variation

= 3 V, R1 = 20 k

R2 (k )

www.vishay.com FaxBack 408-970-5600

Vishay Siliconix

ON/OFF

= 1 A

= 10 F

= 1 F

= 3 V

Si3863DV

d(on)

ON/OFF

d(off)

/R1

2-1

Related parts for SI3863DV-T1-E3

SI3863DV-T1-E3 Summary of contents

Page 1

... GND Note: For R2 switching variations with other V combinations See Typical Characteristics The Si3863DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types ...

Page 2

... On-State (p-channel) Drain-Current On-State (p-channel) Drain-Current Notes a. Surface Mounted on FR4 Board ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2%. www.vishay.com FaxBack 408-970-5600 2-2 New Product Si3863DV ON/OFF R2 Symbol ON/OFF a, b Continuous Pulsed I ...

Page 3

... Document Number: 70866 S-60514—Rev. A, 5-Apr-99 New Product 0.40 0.32 0.24 0.16 0. 0.40 0. 0.16 0.08 0 100 125 150 0 Si3863DV Vishay Siliconix V vs DROP 1 ON/OFF T = 125 – DROP ...

Page 4

... Si3863DV Vishay Siliconix Normalized On-Resistance vs. Junction Temperature 1 1 ON/OFF V = 4.5 V 1.4 IN 1.2 1.0 0.8 0.6 –50 – – Junction Temperature ( C) J Switching Variation ON/OFF d(on ...

Page 5

... V ON/OFF 100 –2 – Square Wave Pulse Dureation (sec) Si3863DV Vishay Siliconix t d(on) 80 Notes Duty Cycle Per Unit Base = R = 150 C/W thJA ( – ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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