AS6C4008-55ZIN Alliance Memory, AS6C4008-55ZIN Datasheet - Page 3

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AS6C4008-55ZIN

Manufacturer Part Number
AS6C4008-55ZIN
Description
SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS6C4008-55ZIN

Rohs
yes
Memory Size
4 Mbit
Organization
512 K x 8
Access Time
55 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
50 uA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
TSOP-II 32 Pin
Interface
Parallel
Maximum Clock Frequency
18 MHz
Factory Pack Quantity
135

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AS6C4008-55ZIN
Manufacturer:
ALLIANCE
Quantity:
5 530
Part Number:
AS6C4008-55ZIN
Manufacturer:
ALLIANCE
Quantity:
6 250
Part Number:
AS6C4008-55ZIN
Manufacturer:
ALLIANCE
Quantity:
6 250
ABSOLUTE MAXIMUM RATINGS*
Terminal Voltage with Respect to V
O
S
P
D
Soldering Temperature (under 10 sec)
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
Standby
Output Disable
Read
Write
Note: H = V
DC ELECTRICAL CHARACTERISTICS
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
Standby Power
Supply Current
Notes: 1. V
o t
o
C
p
w
r e
a r
O
AUG/09, v 1.4
r e
PARAMETER
t a
g
u
e
2. Over/Undershoot specifications are characterized, not 100% tested.
3. Typical values are included for reference only and are not guaranteed or tested.
4. 25 µ A for special request
n i
p t
i D
T
Typical valued are measured at V
g
MODE
t u
s s
e
IH
T
IH
m
C
p i
e
(max) = V
, L = V
p
m
r u
t a
e
PARAMETER
p
e r
o i
a r
e
2009
n
t n
u t
a r
IL
, X = Don't care.
e r
u t
CC
e r
+ 3.0V for pulse width less than 10ns. V
SYMBOL
V
V
V
V
V
I
I
I
I
SB1
CC1
I
LO
CC
IH
IL
CE#
CC
OH
LI
OL
*1
*1
H
L
L
L
512K X 8 BIT LOW POWER CMOS SRAM
CE# = 0.2V, I
other pins at 0.2V or V
V
V
Output Disabled
I
I
Cycle time = Min.
Cycle time = 1 µ s
CE# = 0.2V, I
other pins at 0.2V or V
CE#
OH
OL
SS
CC
CC
CC
= 2mA
= V
=
≧ V
≧ V
1 -
CC
V
OE#
m
(TYP.) and T
Alliance Memory Inc
X
H
X
IN
OUT
CC
L
TEST CONDITION
A
≧ V
- 0.2V
≧ V
I/O
I/O
SS
SYMBOL
= 0mA
= 0mA
T
SS
V
SOLDER
T
I
A
TERM
OUT
T
P
,
STG
IL
= 25 ?
WE#
A
D
(min) = V
X
H
H
L
CC
CC
- 0.2V
- 0.2V
-LL
-LLE/-LLI
SS
- 3.0V for pulse width less than 10ns.
- 55
I/O OPERATION
-40 to 85(I grade)
0 to 70(C grade)
High-Z
High-Z
-0.5 to 6.5
-65 to 150
D
RATING
D
0.7*Vcc
OUT
MIN.
IN
-
260
2
50
2
- 1
- 1
1
0
7 .
-
-
-
-
-
4 .
2 .
TYP.
3
30
4
4
4
-
-
-
-
-
-
0 .
SUPPLY CURRENT
*3
V
AS6C4008
MAX.
Page 3 of 14
CC
50
50
5
0
0.4
I
I
I
60
10
CC
CC
CC
1
1
+0.3
-
5 .
6 .
UNIT
I
*4
*4
SB1
mA
,I
,I
,I
C
C
C
W
V
CC1
CC1
CC1
o
o
o
UNIT
mA
mA
µ A
µ A
µ A
µ A
V
V
V
V
V

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