AS7C256A-10TIN Alliance Memory, AS7C256A-10TIN Datasheet - Page 5

• Manufacturer Part Number: AS7C256A-10TIN
• Description: SRAM 256K, 5V, 10ns, FAST 32K x 8 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS7C256A-10TIN

• Rohs: yes
• Memory Size: 256 KB
• Organization: 32 K x 8
• Access Time: 10 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 75 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-28
• Memory Type: CMOS
• Factory Pack Quantity: 234

9/24/04; v.1.2
Write cycle (over the operating range)
Write waveform 1 (WE controlled)
Write waveform 2 (CE controlled)
Write cycle time
Chip enable to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
Address
Address
WE
CE
D
D
WE
D
out
in
in
Parameter
t
AS
t
AS
Symbol
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AW
WR
DW
OW
WP
AH
DH
WZ
AS
Alliance Semiconductor
9
9
t
WZ
t
AW
Min
9
10
8
8
0
7
0
0
5
0
–
3
t
AW
t
-10
CW
t
t
WC
WC
Max
t
WP
–
–
–
–
–
–
–
–
–
5
–
t
DW
Data valid
Min
12
8
8
0
8
0
0
6
0
–
3
t
DW
Data valid
®
-12
Max
–
–
–
–
–
–
–
–
–
6
–
t
AH
t
DH
t
OW
Min
15
10
10
0
9
0
0
8
0
–
3
t
WR
-15
t
t
t
WR
AH
DH
Max
–
–
–
–
–
–
–
–
–
7
–
Min
20
12
12
12
10
0
0
0
0
–
3
-20
Max
–
–
–
–
–
–
–
–
–
8
–
P. 5 of 9
AS7C256A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4
3,4
3,4