AS7C1024B-12TJIN Alliance Memory, AS7C1024B-12TJIN Datasheet - Page 3

• Manufacturer Part Number: AS7C1024B-12TJIN
• Description: SRAM 1M, 5V, 12ns FAST 128K x 8 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS7C1024B-12TJIN

• Rohs: yes
• Memory Size: 1 Mbit
• Organization: 128 Kbit x 8
• Access Time: 12 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 100 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOJ-32
• Memory Type: CMOS
• Factory Pack Quantity: 22

Capacitance (f = 1 MHz, T
Recommended operating conditions
V
V
DC operating characteristics (over the operating range)
Input leakage
current
Output leakage
current
Operating power
supply current
Standby power
supply current
Output voltage
Supply Voltage
Input Voltage
Ambient operating
temperature
IL
IH
3/26/04, v 1.2
Parameter
min = -1.0V for pulse width less than 5ns
max = V
Input capacitance
I/O capacitance
CC
Parameter
+2.0V for pulse width less than 5ns.
Parameter
Sym
V
|I
I
V
|I
I
I
SB1
LO
CC
SB
LI
OL
OH
|
|
CE2 = V
V
V
V
CC
CC
CC
V
I
V
I
V
OH
a
commercial
CC
= Max, V
OL
industrial
CC
CE2 ≥ V
= Max, CE1 ≥ V
= Max, CE1 ≥ V
IN
CE2 ≤ V
= 25 °C, V
and/or CE2 ≤ 0.2V
= –4 mA, V
= Max, CE1 = V
= 8 mA, V
Test conditions
IL
≥ V
= Max, CE1 ≤ V
V
I
, V
OUT
IN
CC
OUT
≤ 0.2V or
Symbol
IN
IH
IL
= 0 mA
– 0.2V, f = 0
C
C
, f = f
, f = f
Alliance Memory Inc.
= GND to V
I/O
= GND to V
IN
CC
CC
CC
= Min
Max
IH
Max
CC
= Min
IH
= NOMINAL)
and/or
Symbol
–0.2V
IL
,
A, CE1, CE2, WE, OE
V
V
or
V
,
T
T
CC
IH
IL
A
A
CC
CC
Signals
I/O
Min
2.4
-
-
-
-
-
-
-10
®
Min
–0.5
–40
1
4.5
2.2
Max
2
110
0.4
0
50
10
1
1
-
Min
2.4
–
–
–
–
–
–
V
-12
Test conditions
Nominal
IN
Max
100
0.4
45
10
V
= V
1
1
–
5.0
–
–
–
-
IN
OUT
= 0V
Min
2.4
–
–
–
–
–
–
= 0V
-15
V
Max
0.4
90
45
10
1
1
–
CC
Max
5.5
0.8
70
85
+ 0.5
Min
2.4
–
–
–
–
–
–
Max
AS7C1024B
5
7
-20
Max
P. 3 of 9
0.4
80
40
10
1
1
–
Unit
°C
°C
V
V
V
Unit
Unit
mA
mA
µA
µA
pF
pF
V