AS7C1026B-15JINTR Alliance Memory, AS7C1026B-15JINTR Datasheet - Page 5

no-image

AS7C1026B-15JINTR

Manufacturer Part Number
AS7C1026B-15JINTR
Description
SRAM 1M, 5V, 15ns FAST 64K x 16 Asynch SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS7C1026B-15JINTR

Rohs
yes
Memory Size
1 Mbit
Organization
64 Kbit x 16
Access Time
15 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Maximum Operating Current
90 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOJ-44
Memory Type
CMOS
Factory Pack Quantity
1000
Write cycle (over the operating range)
Read waveform 2 (OE, CE, UB, LB controlled)
Write cycle time
Chip enable (CE) to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
Byte select low to end of write
3/26/04, v 1.3
Address
LB, UB
Data
OE
CE
IN
Parameter
t
t
OLZ
BLZ
Alliance Semiconductor
Symbol
t
11
LZ
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AW
WR
DW
WZ
OW
BW
WP
AH
DH
AS
t
t
ACE
AA
Min Max Min Max Min Max Min Max
t
t
OE
10
BA
8
8
0
7
0
0
5
0
1
7
3,6,8,9
-10
5
t
®
RC
12
9
9
0
8
0
0
6
0
1
8
-12
6
Data valid
15
10
10
0
9
0
0
8
0
1
9
-15
7
t
20
12
12
12
10
OH
0
0
0
0
2
9
t
-
HZ
-20
t
t
OHZ
BHZ
8
-
-
-
-
-
-
-
-
-
-
-
AS7C1026B
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
P. 5 of 10
Notes
4, 5
4, 5
5

Related parts for AS7C1026B-15JINTR