AS7C1025B-15JINTR Alliance Memory, AS7C1025B-15JINTR Datasheet - Page 3

• Manufacturer Part Number: AS7C1025B-15JINTR
• Description: SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS7C1025B-15JINTR

• Rohs: yes
• Memory Size: 1 Mbit
• Organization: 128 Kbit x 8
• Access Time: 15 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOJ-32
• Memory Type: CMOS
• Factory Pack Quantity: 1000

3/26/04, v. 1.3
Recommended operating conditions
V
V
Capacitance (
DC operating characteristics (over the operating range)
Supply voltage
Input voltage
Ambient operating temperature
Input capacitance
I/O capacitance
Input leakage current
Output leakage
current
Operating power
supply current
Standby power supply
current
Output voltage
IL
IH
min = -1.0V for pulse width less than 5ns
max = V
Parameter
1
CC
Parameter
+2.0V for pulse width less than 5ns.
f = 1 MHz, T
Symbol
| I
| I
V
I
V
I
I
SB1
LO
CC
SB
LI
OH
OL
Parameter
|
|
a
= 25
V
V
V
V
CE
V
CE ≥ V
V
CE ≥ V
V
f = 0
I
I
OL
OH
out
CC
CC
CC
CC
CC
IN
o
≤
= 8 mA, V
= –4 mA, V
≤ 0.2 V or V
= GND to V
= Max, V
= Max, CE = V
= Max
= Max
= Max
C, V
V
Alliance Memory Inc.
IH
CC
IL
Test conditions
, f = f
, f = f
Symbol
–0.2 V,
CC
C
C
I/O
IN
= NOMINAL
IN
CC
Max,
Max
CC
IN
CC
= GND to V
= Min
≥ V
= Min
I
commercial
IH
OUT
industrial
,
CC
= 0 mA
–0.2 V,
A, CE, WE, OE
)
CC
2
Signals
I/O
®
Min Max Min Max Min Max Min Max
2.4
–
–
–
–
–
–
Symbol
-10
1
V
V
V
T
T
CC
110
0.4
IH
10
IL
A
A
50
1
1
2.4
V
–
–
–
–
–
Test conditions
IN
Min
–0.5
–40
4.5
2.2
-12
0
V
= V
IN
100
0.4
10
45
1
1
–
OUT
= 0 V
Nominal
= 0 V
2.4
5.0
–
–
–
–
–
–
–
–
–
-15
0.4
10
90
45
1
1
–
V
CC
Max
P. 3 of 9
Max
5.5
0.8
70
85
2.4
AS7C1025B
5
7
–
–
–
–
–
+ 0.5
-20
0.4
10
80
40
1
1
–
Unit
Unit
o
o
pF
pF
V
V
V
Unit
C
C
mA
mA
mA
µA
µA
V
V