AS6C8016-55BINTR Alliance Memory, AS6C8016-55BINTR Datasheet - Page 2

• Manufacturer Part Number: AS6C8016-55BINTR
• Description: SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
• Manufacturer: Alliance Memory

Specifications of AS6C8016-55BINTR

• Rohs: yes
• Factory Pack Quantity: 2000

PIN CONFIGURATION
ABSOLUTE MAXIMUN RATINGS*
Voltage on V
Voltage on any other pin relative to V
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
WE#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE#
A18
A17
A16
A15
A14
Vcc
Vss
A4
A3
A2
A1
A0
NOVEMBER/2007, V 1.0
January 2007
NOVEMBER 2007
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
CC
PARAMETER
relative to V
SS
512K X 16 BIT SUPER LOW POWER CMOS SRAM
TSOP II
SS
Alliance Memory Inc.
SYMBOL
V
V
T
T
P
I
T
OUT
A
STG
SOLDER
T1
T2
D
512K X 8 BIT LOW POWER CMOS SRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
-40 to 85(I grade)
-0.5 to V
-0.5 to 6.5
-65 to 150
RATING
G
A
B
C
D
E
H
F
260
50
1
CC
DQ14
DQ15
DQ8
DQ9
LB#
Vss
Vcc
A18
1
+0.5
DQ10
DQ11
DQ12
DQ13
OE#
UB#
NC
A8
2
A17
A14
A12
NC
A0
A3
A5
A9
TFBGA
3
A16
A15
A13
A10
A1
A4
A6
A7
Page 2 of 12
4
AS6C8016
WE#
CE#
DQ1
DQ3
DQ4
DQ5
A11
A2
5
UNIT
mA
℃
℃
℃
W
V
V
DQ0
DQ2
DQ6
DQ7
Vcc
Vss
NC
NC
6