IS61WV12816EDBLL-10TLI-TR ISSI, IS61WV12816EDBLL-10TLI-TR Datasheet - Page 4
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IS61WV12816EDBLL-10TLI-TR
Manufacturer Part Number
IS61WV12816EDBLL-10TLI-TR
Description
SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V
Manufacturer
ISSI
Datasheet
1.IS61WV12816EDBLL-10TLI.pdf
(14 pages)
Specifications of IS61WV12816EDBLL-10TLI-TR
Rohs
yes
Memory Size
2 Mbit
Organization
128 Kbit x 16
Access Time
10 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.4 V
Maximum Operating Current
35 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TSOP-44
Memory Type
Asynchronous CMOS
Factory Pack Quantity
1000
IS61/64WV12816EDBLL
CAPACITANCE
c
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
ERROR DETECTION AND ERROR CORRECTION
• Independent ECC with hamming code for each byte
• Detect and correct one bit error per byte
• Better reliability than parity code schemes which can only detect an error but not correct an error
• Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
OPERATING RANGE (V
Automotive (A1)
Note:
1. Contact SRAM@issi.com for 1.8V option
4
ABSOLUTE MAXIMUM RATINGS
V
t
P
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
Range
Industrial
Automotive (A3)
Symbol
c
Symbol
V
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
stg
In
I/o
term
dd
t
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
dd
Parameter
Input Capacitance
Input/Output Capacitance
Relates to GND
Ambient Temperature
a
(1,2)
= 25°c, f = 1 MHz, V
–40°C to +125°C
–40°C to +85°C
–40°C to +85°C
DD
)
1
dd
= 3.3V.
(1)
IS61WV12816EDBLL
Conditions
V
3.3V ± 10% (8ns)
2.4V-3.6V (10ns)
V
out
V
In
DD
= 0V
= 0V
–0.5 to V
(8, 10n
—
—
–65 to +150
–0.3 to 4.0
Value
1.0
S
)
dd
Integrated Silicon Solution, Inc. — www.issi.com
+ 0.5
Max.
6
8
Unit
°C
W
V
V
IS64WV12816EDBLL
Unit
pF
pF
V
2.4V-3.6V
2.4V-3.6V
DD
—
(10n
S
)
09/29/2011
Rev. A