IS62WV12816DBLL-45TLI-TR ISSI, IS62WV12816DBLL-45TLI-TR Datasheet - Page 9

• Manufacturer Part Number: IS62WV12816DBLL-45TLI-TR
• Description: SRAM 2Mb 128K x 1645ns Async SRAM
• Manufacturer: ISSI

Specifications of IS62WV12816DBLL-45TLI-TR

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 45 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 21 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: CMOS
• Factory Pack Quantity: 1000

IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
AC WAVEFORMS
READ CYCLE NO. 1
AC WAVEFORMS
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CS1, UB, or LB = V
3. Address is valid prior to or coincident with CS1 LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
2/4/2013
ADDRESS
ADDRESS
LB
DOUT
D
CS1
CS2
,
OUT
OE
UB
(1,2)
(1,3)
PREVIOUS DATA VALID
(Address Controlled) (CS1 = OE = V
(CS1, CS2, OE, AND UB/LB Controlled)
t
ACE1/
t
t
HIGH-Z
LZCE1/
LZCE2
t
LZB
t
ACE2
t
BA
t
AA
t
LZOE
t
t
DOE
OHA
t
RC
IL
. cS2=WE=V
t
AA
IL
, CS2 = WE = V
t
RC
IH
.
DATA VALID
t
t
HZCS1/
HZCS2
IH
t
HZB
, UB or LB = V
t
DATA VALID
HZOE
t
OHA
t
OHA
IL
)
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