IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 21

• Manufacturer Part Number: IS43R16160B-5TL
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 200 MHz
• Access Time: 0.7 ns
• Supply Voltage (max): 2.7 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 290 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant
• Other names: 706-1085; IS43R16160B-5TL

DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
AC TIMING REQUIREMENTS(Continues)
Output Load Condition
Symbol
tXSNR Exit Self Ref. to non-Read command
tXSRD Exit Self Ref. to -Read command
tXPNR Exit Power down to command
tXPRD Exit Power down to -Read command
tWTR
tREFI
tRCD
tRRD
tDAL
tRAS
tRFC
tWR
tRC
tRP
V
OUT
Row Active time
Row Cycle time(operation)
Auto Ref. to Active/Auto Ref. command period
Row to Column Delay
Row Precharge time
Act to Act Delay time
Write Recovery time
Auto Precharge write recovery + precharge time
Internal Write to Read Command Delay
Average Periodic Refresh interval
AC Characteristics Parameter
Zo=50
Preliminary
Preliminary
V
TT
=V
30pF
50
REF
V
REF
tWR+tRP
Min.
200
40
55
70
15
15
10
15
75
2
1
1
-5
120,000
256M Double Data Rate Synchronous DRAM
Max
7.8
DQS
tWR+tRP
Min.
200
42
60
72
18
18
12
15
75
1
1
1
-6
120,000
Max
7.8
Zentel Electronics Corporation
tWR+tRP
DQ
A3S56D30/40ETP
Min.
200
Output Timing
Measurement
Reference Point
45
65
75
20
20
15
15
75
1
1
1
-75
120,000
Max
7.8
tCK
tCK
tCK
tCK
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
Notes
18
17
V
V
REF
REF
21