5962-3829406MZA IDT, 5962-3829406MZA Datasheet - Page 4

• Manufacturer Part Number: 5962-3829406MZA
• Description: SRAM 64K Asynchronous 8K x 8 SRAM
• Manufacturer: IDT

DC Electrical Characteristics
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (V
AC Test Conditions
NOTES:
1. T
2. t
3. This parameter is guaranteed by device characterization, but is not production tested.
I
I
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
V
t
t
AC Test Load
CCDR
CDR
R
I
LI
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Symbol
DR
(3)
I
Symbol
(3)
RC
V
V
|I
(3)
|I
A
LO
OL
OH
LI
= +25°C.
= Read Cycle Time.
|
|
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
DATA
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
V
CC
for Data Retention
OUT
Parameter
Figure 1. AC Test Load
255Ω
Parameter
LC
= 0.2V, V
5V
I
I
I
V
V
V
V
OL
OL
OH
CC
IN =
CC
OUT
480Ω
= 8mA, V
= 10mA, V
2967 drw 03
= -4mA, V
30pF*
See Figures 1 and 2
= Max.,
= Max., CS
HC
GND to V
= GND to V
1. CS
2. CS
CS
GND to 3.0V
= V
1
2
2
1.5V
1.5V
Test Condition
5ns
CC
> V
> V
Test Conditions
< V
CC
CC
*Includes scope and jig capacitances
CC
CC
,
1
= Min.
HC
HC
LC
= Min.
= Min.
CC
= V
(V
____
MIL.
COM'L. & IND
, or
- 0.2V)
2967 tbl 11
IH
CC
,
= 5.0V ± 10%)
MIL.
COM'L. & IND
MIL.
COM'L. & IND
4
Min.
t
RC
2.0
____
____
____
Military, Commercial, and Industrial Temperature Ranges
0
(2)
(for t
DATA
CLZ1,
Min.
____
____
____
____
____
____
2.4
2.0V
____
____
____
____
t
10
10
IDT7164S
OUT
CLZ2
V
255Ω
Typ.
, t
Figure 2. AC Test Load
CC
OLZ
@
(1)
Max.
, t
0.4
0.5
____
10
10
5
5
3.0V
____
____
____
____
CHZ1,
15
15
t
CHZ2
5V
Min.
, t
2.4
2.0V
____
____
____
____
____
____
200
____
____
____
60
OHZ
2
480Ω
IDT7164L
2967 drw 04
5pF*
, t
V
Max.
CC
OW
@
, and t
3.0V
Max.
300
____
____
____
0.4
0.5
____
90
2
5
2
5
2
,
WHZ
)
2967 tbl 09
2967 tbl 10
Unit
Unit
μA
μA
ns
ns
µA
µA
V
V
V