IS42S32200E-7BLI ISSI, Integrated Silicon Solution Inc, IS42S32200E-7BLI Datasheet - Page 34

IC SDRAM 64MBIT 143MHZ 90BGA

IS42S32200E-7BLI

Manufacturer Part Number
IS42S32200E-7BLI
Description
IC SDRAM 64MBIT 143MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32200E-7BLI

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1080
IS42S32200E-7BLI

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32200E-7BLI
Manufacturer:
KOA
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240 000
Part Number:
IS42S32200E-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32200E-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
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IS42S32200E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
2. Icc
34
Symbol
I
I
V
V
I
I
I
I
I
I
I
I
OL
IL
CC1
CC2P
CC2PS
CC3P
CC3PS
CC4
CC5
CC6
O H
OL
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V V
the tested pin at 0V
Output is disabled, 0V V
I
I
One Bank Operation,
Burst Length=1
t
I
CKE V
CKE V
t
I
BL = 4; 4 banks activated
t
t
CKE 0.2V
OUT
OUT
RC
OUT
CK
OUT
RC
CLK
= t
= t
= 0mA
= 0mA
= t
= –2 mA
= +2 mA
t
RC
IN
CK
RC
CLK
(min.)
IL
IL
(
(
V
(
(
MIN
MIN
(
MIN
MAX
MAX
DD
Integrated Silicon Solution, Inc. — www.issi.com —
)
)
(Recommended Operation Conditions unless otherwise noted.)
)
, with pins other than
)
)
OUT
CAS latency = 3
CAS latency = 3
CAS latency = 3
V
DD
t
t
t
t
1
CK
CK
CK
CK
and Icc
=
=
= 15ns
= 10ns
4
are obtained with the output open state.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Speed
-5
-6
-7
-7
-5
-6
-7
-7
-5
-6
-7
-7
DD
and GND for each memory
Min.
2.4
–5
–5
1-800-379-4774
Max.
130
145
180
130
100
110
150
150
130
150
0.4
95
85
5
5
2
4
1
3
7
7
5
5
1
Rev. 00D
06/02/08
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V

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