IS42S16160D-7BL ISSI, Integrated Silicon Solution Inc, IS42S16160D-7BL Datasheet - Page 29

IC SDRAM 256MBIT 143MHZ 54BGA

IS42S16160D-7BL

Manufacturer Part Number
IS42S16160D-7BL
Description
IC SDRAM 256MBIT 143MHZ 54BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S16160D-7BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-BGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1073
IS42S16160D-7BL

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IS42S83200D, IS42S16160D
diagram for each possible CAS latency; data element n +
3 is either the last of a burst of four or the last desired of
a longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until t
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the PRE-
CHARGE command is that it requires that the command
and address buses be available at the appropriate time to
issue the command; the advantage of the PRECHARGE
command is that it can be used to truncate fixed-length
or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated.The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency;data element n + 3 is the last desired
data element of a longer burst.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
12/12/07
rp
is met. Note that part of the row precharge time is
29

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