IS62WV51216BLL-55TLI ISSI, Integrated Silicon Solution Inc, IS62WV51216BLL-55TLI Datasheet
IS62WV51216BLL-55TLI
Specifications of IS62WV51216BLL-55TLI
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IS62WV51216BLL-55TLI Summary of contents
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... Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV51216ALL and IS62WV51216BLL are packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II). ...
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... IS62WV51216ALL, IS62WV51216BLL PIN CONFIGURATIONS 48-Pin mini BGA (7.2mm x 8.7mm CS1 A4 I I GND A17 A7 I/O I I/O V I/O GND A16 I/O I/O A14 A15 I I/O NC A12 A13 15 H A18 A9 A10 A11 A8 44-Pin TSOP (Type II CS1 6 I/O0 7 I/O1 8 I/ GND 12 I/O4 ...
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... WE CS1 CS1 Mode Not Selected Output Disabled Read Write OPERATING RANGE ( Range Ambient Temperature IS62WV51216ALL (70ns) IS62WV51216BLL (55ns, 70ns) Commercial 0°C to +70°C Industrial –40°C to +85°C Integrated Silicon Solution, Inc. — www.issi.com — Rev. D 12/13/2007 CS2 I/O0-I/ High High-Z ...
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... IS62WV51216ALL, IS62WV51216BLL ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Temperature Under Bias BIAS V V Related to GND Storage Temperature STG P Power Dissipation T Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...
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... IS62WV51216ALL, IS62WV51216BLL CAPACITANCE (1) Symbol Parameter C Input Capacitance IN C Input/Output Capacitance OUT Note: 1. Tested initially and after any design or process changes that may affect these parameters. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level ...
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... IS62WV51216ALL, IS62WV51216BLL IS62WV51216ALL, POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I OUT I Operating Supply Current CS2 = V I TTL Standby Current (TTL Inputs CS1 = ULB Control V DD CS1 = V I CMOS Standby CS1 ≥ V Current (CMOS Inputs) CS2 ≤ 0.2V, ...
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... IS62WV51216ALL, IS62WV51216BLL IS62WV51216BLL, POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I OUT I Operating Supply Current CS2 = V I TTL Standby Current (TTL Inputs CS1 = ULB Control V DD CS1 = V I CMOS Standby CS1 ≥ V Current (CMOS Inputs) CS2 ≤ 0.2V, ...
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... IS62WV51216ALL, IS62WV51216BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CS1/CS2 Access Time t t ACS1/ ACS2 OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CS1/CS2 to High-Z Output ...
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... IS62WV51216ALL, IS62WV51216BLL AC WAVEFORMS (1,3) (CS1, CS2, OE, AND UB/LB Controlled) READ CYCLE NO. 2 ADDRESS OE CS1 s CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1, UB Address is valid prior to or coincident with CS1 LOW transition. Integrated Silicon Solution, Inc. — www.issi.com — ...
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... IS62WV51216ALL, IS62WV51216BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time WC CS1/CS2 to Write End t t SCS1/ SCS2 t Address Setup Time to Write End AW t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width t (4) PWE ...
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... IS62WV51216ALL, IS62WV51216BLL (WE Controlled HIGH During Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN Integrated Silicon Solution, Inc. — www.issi.com — Rev. D 12/13/2007 SCS1 t SCS2 ...
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... IS62WV51216ALL, IS62WV51216BLL WRITE CYCLE NO. 4 (UB/LB Controlled) ADDRESS OE CS1 LOW HIGH CS2 WE UB HZWE D OUT DATA UNDEFINED ADDRESS 1 ADDRESS PBW WORD 1 HIGH DATA IN VALID Integrated Silicon Solution, Inc. — www.issi.com — PBW WORD 2 t LZWE t HD DATA IN VALID UB_CSWR4.eps 1-800-379-4774 Rev. D ...
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... IS62WV51216ALL, IS62WV51216BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR DATA RETENTION WAVEFORM V DD 1.65V 1. CS1 GND DATA RETENTION WAVEFORM V DD 3.0 CE2 2. 0.4V GND Integrated Silicon Solution, Inc. — www.issi.com — ...
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... Order Part No. IS62WV51216ALL-70TI IS62WV51216ALL-70BI IS62WV51216ALL-70BLI IS62WV51216ALL-70XI Order Part No. IS62WV51216BLL-45B Order Part No. Package IS62WV51216BLL-55TI TSOP-II IS62WV51216BLL-55TLI TSOP-II, Lead-free IS62WV51216BLL-55BI mini BGA (7.2mm x 8.7mm) IS62WV51216BLL-55BLI mini BGA (7.2mm x 8.7mm), Lead-free IS62WV51216BLL-70XI DIE Integrated Silicon Solution, Inc. — www.issi.com — Package TSOP-II mini BGA(7.2mmx8.7mm) mini BGA(7 ...
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... IS62WV51216ALL, IS62WV51216BLL Mini Ball Grid Array Package Code: B (48-pin) Top View SEATING PLANE mBGA - 7.2mm x 8.7mm MILLIMETERS INCHES Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 48 A — — 1.20 — .24 — 0.30 0.009 A2 0.60 — — 0.024 D 8.60 8.70 8.80 ...
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PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads ( — 1.20 — A1 0.05 0.15 0.002 0.006 b 0.30 0.52 0.012 ...