IS62WV51216BLL-55BLI ISSI, Integrated Silicon Solution Inc, IS62WV51216BLL-55BLI Datasheet - Page 8

IC SRAM 8MBIT 55NS 48MBGA

IS62WV51216BLL-55BLI

Manufacturer Part Number
IS62WV51216BLL-55BLI
Description
IC SRAM 8MBIT 55NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV51216BLL-55BLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-MBGA
Density
8Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
SDR
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
5mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1113
IS62WV51216BLL-55BLI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV51216BLL-55BLI
Manufacturer:
ABB
Quantity:
1 000
Part Number:
IS62WV51216BLL-55BLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS62WV51216BLL-55BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS62WV51216BLL-55BLI
Manufacturer:
ISSI
Quantity:
20 000
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Part Number:
IS62WV51216BLL-55BLI
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Company:
Part Number:
IS62WV51216BLL-55BLI
Quantity:
47
Part Number:
IS62WV51216BLL-55BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS62WV51216ALL,
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1
8
Symbol
ADDRESS
t
t
t
t
t
t
t
t
t
t
t
t
V
ACS1/
DOE
HZOE
HZCS1/
LZCS1/
BA
HZB
LZB
RC
AA
OHA
LZOE
DD
D
-0.2V/0.4V to V
Q0-D15
(2)
(2)
t
ACS2
t
t
LZCS2
HZCS2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1/CS2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
DD
-0.3V and output loading specified in Figure 1.
PREVIOUS DATA VALID
(1,2)
(Address Controlled) (CS1 = OE = V
IS62WV51216BLL
Integrated Silicon Solution, Inc. — www.issi.com —
t
OHA
Min.
45
10
10
5
0
0
0
45 ns
Max.
45
45
20
15
15
45
15
t
(1)
AA
t
(Over Operating Range)
RC
IL
, CS2 = WE = V
Min.
55
10
10
5
0
0
0
55 ns
Max.
55
55
25
20
20
55
20
DATA VALID
IH
, UB or LB = V
t
OHA
Min.
70
10
10
5
0
0
0
70 ns
IL
Max.
)
70
70
35
25
25
70
25
1-800-379-4774
12/13/2007
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev. D

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