AS7C1026B-12TJCN Alliance Memory, AS7C1026B-12TJCN Datasheet - Page 5

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AS7C1026B-12TJCN

Manufacturer Part Number
AS7C1026B-12TJCN
Description
SRAM Fast Asynch 5V 64Kx16 12ns 1Mb
Manufacturer
Alliance Memory
Datasheet

Specifications of AS7C1026B-12TJCN

Rohs
yes
Memory Size
1 Mbit
Organization
64 K x 16
Access Time
12 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Maximum Operating Current
100 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Package / Case
SOJ-32
Write cycle (over the operating range)
Read waveform 2 (OE, CE, UB, LB controlled)
Write cycle time
Chip enable (CE) to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
Byte select low to end of write
3/26/04, v 1.3
Address
LB, UB
Data
OE
CE
IN
Parameter
t
t
OLZ
BLZ
Alliance Semiconductor
Symbol
t
11
LZ
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AW
WR
DW
WZ
OW
BW
WP
AH
DH
AS
t
t
ACE
AA
Min Max Min Max Min Max Min Max
t
t
OE
10
BA
8
8
0
7
0
0
5
0
1
7
3,6,8,9
-10
5
t
®
RC
12
9
9
0
8
0
0
6
0
1
8
-12
6
Data valid
15
10
10
0
9
0
0
8
0
1
9
-15
7
t
20
12
12
12
10
OH
0
0
0
0
2
9
t
-
HZ
-20
t
t
OHZ
BHZ
8
-
-
-
-
-
-
-
-
-
-
-
AS7C1026B
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
P. 5 of 10
Notes
4, 5
4, 5
5

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