MT46V128M4FN-6:D TR Micron Technology Inc, MT46V128M4FN-6:D TR Datasheet - Page 84
![IC DDR SDRAM 512MBIT 6NS 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT46V128M4FN-6:D TR
Manufacturer Part Number
MT46V128M4FN-6:D TR
Description
IC DDR SDRAM 512MBIT 6NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V128M4FN-6:D TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (128Mx4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1012-2
MT46V128M4FN-6:D
MT46V128M4FN-6:F
MT46V128M4FN-6:D
MT46V128M4FN-6:F
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Figure 49:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
BA0, BA1
Address
DQ
DQS
CK#
CKE
A10
DM
CK
5
t IS
t IS
NOP
T0
WRITE – DM Operation
t IH
1
t IH
Notes:
Bank x
t IS
t IS
ACT
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 85 for detailed DQ timing.
t IH
t IH
t CK
times.
t RCD
t RAS
NOP
T2
1
t CH
t CL
Bank x
WRITE
t IS
3
Col n
T3
t DQSS (NOM)
t IH
2
t WPRES t WPRE
t DS
84
NOP
T4
DI
b
1
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t DQSL
NOP
T5
512Mb: x4, x8, x16 DDR SDRAM
t DQSH
1
T5n
t WPST
NOP
T6
1
Transitioning Data
©2000 Micron Technology, Inc. All rights reserved.
t WR
NOP
T7
1
Operations
All banks
One bank
Bank x
Don’t Care
PRE
T8
4
t RP
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