MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 63
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MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 27: READ-to-WRITE
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQ
DQ
DQS
DQS
CK#
CK#
DM
DM
CK
CK
3,4
3,4
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
2. BST = BURST TERMINATE command; page remains open.
3. D
4. D
5. Shown with nominal
6. CKE = HIGH.
1
1
mand shown can be NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
2
2
CL = 3
T1n
D
t
AC,
OUT
NOP
n
T2
NOP
T2
t
63
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
OUT
n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
Col b
T3
T3
t
DQSQ.
1
D
n + 1
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
Col b
T4
D
T4
NOP
b
IN
1
t
(NOM)
DQSS
T4n
T4n
b+1
D
IN
Transitioning Data
© 2007 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
D
b+2
T5
NOP
NOP
b
IN
IN
b + 1
T5n
T5n
D
b+3
D
IN
IN