M24C08-RMN6TP STMicroelectronics, M24C08-RMN6TP Datasheet - Page 20
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M24C08-RMN6TP
Manufacturer Part Number
M24C08-RMN6TP
Description
IC EEPROM 8KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Specifications of M24C08-RMN6TP
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
8K (1K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
1 K x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Density
8Kb
Access Time (max)
900ns
Frequency (max)
400KHz
Write Protection
Yes
Data Retention
40Year
Operating Supply Voltage (typ)
2.5/3.3/5V
Package Type
SOIC N
Operating Temp Range
-40C to 85C
Supply Current
0.8mA
Operating Supply Voltage (min)
1.8V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8637-2
M24C08-RMN6TP
M24C08-RMN6TP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M24C08-RMN6TP
Manufacturer:
STMicroelectronics
Quantity:
30 513
Company:
Part Number:
M24C08-RMN6TP
Manufacturer:
ST
Quantity:
900
Company:
Part Number:
M24C08-RMN6TP
Manufacturer:
STMicroelectronics
Quantity:
12 150
Part Number:
M24C08-RMN6TP
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
20/39
Table 9.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Table 10.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Symbol
Symbol
I
V
I
V
I
V
I
CC1
V
V
I
I
completion of the internal write cycle t
CC1
V
completion of the internal write cycle t
I
LO
CC
I
CC
LO
LI
OL
OL
IH
LI
IL
IH
IL
Input leakage current
(SCL, SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
Input leakage current (SCL,
SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
DC characteristics (M24Cxx-W, device grade 6)
DC characteristics (M24Cxx-W, device grade 3)
Parameter
Parameter
Doc ID 5067 Rev 16
W
W
V
Test conditions (in addition to those in
Device not selected
SDA in Hi-Z, external voltage applied on
IN
(t
(t
W
I
W
Device not selected
(in addition to those in
Device not selected
OL
= V
I
OL
is triggered by the correct decoding of a write command).
is triggered by the correct decoding of a write command).
I
SDA in Hi-Z, external voltage
applied on SDA: V
OL
I
V
= 2.1 mA when V
OL
V
SS
= 2.1 mA when V
IN
V
V
CC
= 3 mA when V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
V
for 2.5 V < V
CC
CC
= 3 mA when V
or V
= V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
or V
CC
or V
M24C16, M24C08, M24C04, M24C02, M24C01
= 2.5 V, f
Test condition
SDA: V
Standby mode
= 5 V, f
= 2.5 V, f
SS
CC
= 5 V, f
CC
CC
or V
, V
Table
, device in Standby mode
, V
CC
C
SS
(1)
CC
C
CC
c
= 400 kHz
c
CC
= 400 kHz
= 400 kHz
, V
= 2.5 V
or V
(1)
(1)
6)
, device in
= 5 V
= 400 kHz
CC
SS
CC
CC
IN
, V
CC
, V
CC
5.5 V
= 2.5 V or
or V
= 5.5 V
= V
Table
IN
IN
= 2.5 V or
= 5.5 V
= V
= V
SS
CC
SS
SS
or V
6)
CC
0.7V
–0.45
Min.
,
0.7V
–0.45 0.3V
CC
Min.
CC
0.3V
V
Max.
CC
± 2
± 2
0.4
V
3
3
5
2
Max. Unit
CC
± 2
± 2
0.4
+1
CC
2
1
1
+1
CC
Unit
mA
mA
µA
µA
µA
µA
mA
mA
V
V
V
µA
µA
µA
V
V
V