M93C66-RMB6TG STMicroelectronics, M93C66-RMB6TG Datasheet - Page 24

• Manufacturer Part Number: M93C66-RMB6TG
• Description: IC EEPROM 4KBIT 1MHZ 8UFDFPN
• Manufacturer: STMicroelectronics

Specifications of M93C66-RMB6TG

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (512 x 8 or 256 x 16)
• Speed: 1MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-MLP, 8-UFDFPN
• Memory Configuration: 512 X 8, 256 X 16
• Interface Type: Serial, Microwire
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: DFN
• No. Of Pins: 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8708-2; M93C66-RMB6TG

DC and AC parameters
24/36
Table 18.
1. New product: identified by Process Identification letter W or G or S.
Table 19.
1. This product is under development. For more information, please contact your nearest ST sales office.
Symbol
Symbol
I
V
V
V
I
I
I
CC1
V
V
V
I
V
I
CC
I
CC1
V
LO
OH
I
LI
OL
CC
LO
OH
IH
IL
LI
OL
IH
IL
Supply current (CMOS
inputs)
Supply current (Standby)
S)
S)
Input leakage current
Output leakage current
Input low voltage (D, C,
Input high voltage (D, C,
Output low voltage (Q)
Output high voltage (Q)
Supply current (CMOS
inputs)
Supply current (Standby)
S)
S)
Input leakage current
Output leakage current
Input low voltage (D, C,
Input high voltage (D, C,
Output low voltage (Q)
Output high voltage (Q)
DC characteristics (M93Cx6-W, device grade 3)
DC characteristics (M93Cx6-R)
Parameter
Parameter
Doc ID 4997 Rev 11
V
V
V
V
V
V
CC
CC
CC
V
CC
CC
CC
V
0V V
V
V
V
0V V
CC
pin7 = V
V
CC
pin7 = V
= 2.5 V, S = V
CC
CC
CC
= 1.8 V, S = V
= 2.5 V, S = V
CC
= 5 V, S = V
= 1.8 V, S = V
ORG = V
= 5 V, S = V
ORG = V
= 2.5 V, I
= 1.8 V, I
= 2.5 V, I
Test condition
= 5 V, I
= 1.8 V, I
M93C86, M93C76, M93C66, M93C56, M93C46
Test condition
= 5 V, I
OUT
0V V
OUT
0V V
Q = open
Q = open
Q = open
Q = open
CC
CC
V
, V
V
OH
SS
IN
, V
IN
SS
OL
OH
CC
OH
CC
OL
OL
IH
SS
IH
SS
or V
IH
= –400 µA
, Q in Hi-Z
or V
V
= 2.1 mA
, Q in Hi-Z
IH
SS
V
= –100 µA
, f = 2 MHz,
SS
= 100 µA
= –100 µA
, f = 2 MHz,
CC
, f = 2 MHz,
= 100 µA
or Hi-Z
CC
, f = 1 MHz,
or Hi-Z
, C = V
, C = V
CC
CC
,
,
SS
SS
,
,
V
0.7 V
0.8 V
V
Min.
0.8 V
–0.45
CC
Min.
–0.45
CC
–0.2
–0.2
(1)
CC
CC
(1)
CC
0.2 V
V
Max.
0.2 V
V
Max.
CC
±2.5
±2.5
CC
±2.5
±2.5
0.4
0.2
0.2
2
1
5
2
1
2
+ 1
+ 1
CC
(1)
CC
(1)
Unit
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V