M24C32-RMN6TP STMicroelectronics, M24C32-RMN6TP Datasheet - Page 24

• Manufacturer Part Number: M24C32-RMN6TP
• Description: IC EEPROM 32KBIT 400KHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M24C32-RMN6TP

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 32K (4K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 4 K x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.4 MHz
• Access Time: 900 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 0.8 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 1.8 V, 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8644-2; M24C32-RMN6TP

DC and AC parameters
Table 13.
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a Read command (after the Stop condition) or after the completion of the
Table 14.
1. If the application uses the M24C32-R at 2.5 V < V
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read command (after the Stop condition) or after the completion of the
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Symbol
Symbol
I
I
V
internal write cycle t
I
V
characteristics (M24xxx-W, device grade 6)
internal write cycle t
I
I
I
CC0
CC1
V
V
I
I
V
LO
CC
I
CC0
CC1
V
OL
I
LI
CC
LO
IH
IL
OL
LI
IH
IL
Input leakage current
(SCL, SDA, E2, E1, E0)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage (SDA, SCL, WC)
Input high voltage (SCL, SDA)
Input high voltage (WC, E0, E1, E2)
Output low voltage
Input leakage current (SCL, SDA,
E2, E1, E0)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage (SDA, SCL, WC)
Input high voltage (SCL, SDA)
Input high voltage (WC, E0, E1, E2)
Output low voltage
DC characteristics (M24xxx-W, device grade 3)
DC characteristics (M24xxx-R - device grade 6)
W
W
(t
(t
Parameter
W
W
Parameter
is triggered by the correct decoding of a Write command).
is triggered by the correct decoding of a Write command).
instead of the above table.
CC
Doc ID 4578 Rev 17
Device not selected
Test condition (in addition to
During t
Device not selected
< 5.5 V and –40 °C < T
2.5 V < V
(in addition to those in
applied on SDA: V
SDA Hi-Z, external voltage
During t
V
device in Standby mode
I
SDA in Hi-Z, external voltage
I
OL
applied on SDA: V
OL
CC
V
those in
or V
1.8 V  V
2.5 V  V
device in Standby mode
I
OL
CC
V
= 1 mA, V
= 2.1 mA, V
= 1.8 V, f
W
IN
V
, 2.5 V < V
= 3 mA, V
, 1.8 V < V
CC
Test condition
CC
W
= V
IN
, V
, 2.5 V < V
= V
< 5.5 V, f
SS
Table
CC
CC
CC
c
SS
CC
or V
= 400 kHz
= 1.8 V
< 2.5 V
< 5.5 V
(3)
CC
CC
or V
(2)
SS
CC
= 1.8 V
CC
, V
8)
CC
A
, V
SS
= 2.5 V or
or V
c
CC
= 5.5 V
< +85 °C, please refer to
(1)
< 5.5 V
< 2.5 V
IN
CC
= 400 kHz
IN
or V
< 5.5 V
= V
Table
= V
CC
M24C32-W M24C32-R M24C32-F
CC
SS
SS
7)
or
0.7V
0.7V
–0.45
–0.45
Min.
0.7V
0.7V
–0.45
Min.
CC
CC
CC
CC
Table 12: DC
0.25 V
V
0.3 V
V
0.3V
CC
Max.
CC
3
Max.
± 2
± 2
0.8
6.5
0.2
5
± 2
± 2
6.5
0.4
1
(2)
10
+0.6
2
(1)
+0.6
CC
CC
CC
Unit
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V