M24C64-RMN6TP STMicroelectronics, M24C64-RMN6TP Datasheet - Page 29
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M24C64-RMN6TP
Manufacturer Part Number
M24C64-RMN6TP
Description
IC EEPROM 64KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.M24C64-WMN6TP.pdf
(44 pages)
Specifications of M24C64-RMN6TP
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
8 K x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
0.8 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8648-2
M24C64-RMN6TP
M24C64-RMN6TP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M24C64-RMN6TP
Manufacturer:
STMicroelectronics
Quantity:
3 500
Part Number:
M24C64-RMN6TP
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M24C64-RMN6TPCSA
Manufacturer:
STM
Quantity:
251
M24C64-DF, M24C64-W, M24C64-R, M24C64-F
Table 15.
1. If the application uses the voltage range F device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C,
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-F)
Table 12
Parameter
instead of this table.
C
max = 1 MHz (see
Doc ID 16891 Rev 23
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
During t
Device not selected
V
1.7 V ≤ V
1.7 V ≤ V
1.7 V ≤ V
I
(t
Test conditions
f
OL
c
IN
CC
IN
W
= 1 MHz
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
to those in
= 1.7 V, f
SS
SS
W
CC
CC
CC
, 1.7 V < V
or V
or V
Table
(2)
Table
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
17).
Table 9
, V
= 1.7 V
(1)
10)
SS
CC
(in addition
CC
(4)
or V
,
= 1.7 V
< 2.5 V
and
CC
0.75V
0.75V
DC and AC parameters
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
29/44
mA
mA
mA
µA
µA
µA
V
V
V
V