CY62256NLL-55SNXI Cypress Semiconductor Corp, CY62256NLL-55SNXI Datasheet - Page 4

• Manufacturer Part Number: CY62256NLL-55SNXI
• Description: IC SRAM 256KBIT 55NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62256NLL-55SNXI

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOIC (7.5mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 50 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Memory Configuration: 32K X 8
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: NSOIC
• No. Of Pins: 28
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2083-5; CY62256NLL-55SNXI

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied ........................................... –55 C to +125 C
Supply voltage to ground potential
(pin 28 to pin 14)...........................................–0.5 V to +7.0 V
DC voltage applied to outputs
in high Z State
DC input voltage
Output current into outputs (LOW) .............................. 20 mA
Electrical Characteristics
Over the Operating Range
Capacitance
Document Number: 001-06511 Rev. *D
V
V
V
V
I
I
I
I
I
C
C
Notes
Parameter
IX
OZ
CC
SB1
SB2
3. V
4. T
5. Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions
6. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
(T
A
IL
A
is the “Instant-On” case temperature.
(min) =
Parameter
= 25 °C, V

Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current GND < V
V
current
Automatic CE
power down current—
TTL inputs
Automatic CE
power down current—
CMOS inputs
2.0 V for pulse durations of less than 20 ns.
[3]
CC
CC
[3]
.................................. –0.5 V to V
). Parameters are guaranteed by design and characterization, and not 100% tested.
operating supply
[6]
............................... –0.5 V to V
Description
Input capacitance
Output capacitance
Description
V
V
GND < V
V
I
f = f
Max. V
V
f = f
Max. V
CE > V
V
V
OUT
IN
CC
CC
CC
IN
IN
MAX
> V
MAX
> V
< 0.3 V, f = 0
= Min, I
= Min, I
= Max,
= 0 mA,
IH
CC
CC
CC
CC
= 1/t
I
O
or V
, CE > V
< V
,
 0.3 V, or
< V
 0.3 V
Test Conditions
CC
CC
OH
OL
IN
CC
RC
CC
+ 0.5 V
+ 0.5 V
< V
= 2.1 mA
= 1.0 mA
, output disabled
IH
IL
,
,
LL-Commercial
LL - Industrial
LL - Auto-A
LL - Auto-E
LL-Commercial
LL - Industrial
LL - Auto-A
LL - Auto-E
LL-Commercial
LL - Industrial
LL - Auto-A
LL - Auto-E
T
A
= 25 C, f = 1 MHz, V
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Commercial
Industrial
Automotive-A
Automotive-E
Test Conditions
Range
–0.5
–0.5
–0.5
Min
2.4
2.2
–
–
–
–
–
–
–
–
–
–
–
–
–
CC
Typ
Ambient Temperature (T
0.3
0.3
0.3
0.1
0.1
0.1
25
25
25
–55
= 5.0 V
–
–
–
–
–
–
–
–
–
[5]
–40
–40
–40
0
V
0.5 V
Max
+0.5
+0.5
0.4
0.8
0.5
0.5
0.5

CC
50
10
50
50
10
15

–
–
–
–
C to +70


C to +125
C to +85
C to +85
+
–0.5
–0.5
–0.5
Min
2.4
2.2
–
–
–
–
–
–
–
–
–
–
–
–
–
Max

6
8
C



C
C
C
Typ
0.3
0.3
0.3
0.1
0.1
0.1
25
25
25
–70
–
–
–
–
–
–
–
–
–
A
[5]
)
CY62256N
[4]
V
0.5 V
Max
+0.5
+0.5
Page 4 of 14
0.4
0.8
0.5
0.5
0.5
5 V  10%
5 V  10%
5 V  10%
5 V  10%
CC
50
50
50
10
10
–
–
–
5
–
Unit
+
V
pF
pF
CC
Unit
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
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