CY62126EV30LL-45ZSXI Cypress Semiconductor Corp, CY62126EV30LL-45ZSXI Datasheet - Page 6

IC SRAM 1MBIT 45NS 44TSOP

CY62126EV30LL-45ZSXI

Manufacturer Part Number
CY62126EV30LL-45ZSXI
Description
IC SRAM 1MBIT 45NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62126EV30LL-45ZSXI

Memory Size
1M (64K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
16 mA
Organization
64 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V or 3.3 V
Memory Configuration
64K X 16
Supply Voltage Range
2.2V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2063
CY62126EV30LL-45ZSXI

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Data Retention Characteristics
Over the Operating Range
Document #: 38-05486 Rev. *H
V
I
t
t
Notes
CCDR
CDR
R
Parameter
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
9. Tested initially and after any design or process changes that may affect these parameters.
10. Full device AC operation requires linear V
DR
[10]
[10]
[9]
V
CE
CC
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
V
V
t
CC
IN
CC(min)
CDR
> V
Figure 4. Data Retention Waveform
= V
CC
DR
DR
, CE > V
– 0.2 V or V
to V
CC(min)
Conditions
DATA RETENTION MODE
CC
> 100 s.
IN
– 0.2 V,
< 0.2 V
V
DR
> 1.5 V
Automotive
Industrial
Min
1.5
t
0
RC
CC
V
CY62126EV30 MoBL
CC(min)
= V
t
Typ
R
CC(typ)
[8]
, T
A
= 25 °C.
Max
30
3
Page 6 of 16
Unit
A
A
ns
ns
V

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