IDT71016S20YG IDT, Integrated Device Technology Inc, IDT71016S20YG Datasheet - Page 3

• Manufacturer Part Number: IDT71016S20YG
• Description: IC SRAM 1MBIT 20NS 44SOJ
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71016S20YG

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (64K x 16)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-SOJ
• Density: 1Mb
• Access Time (max): 20ns
• Sync/async: Asynchronous
• Architecture: SDR
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 16b
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 170mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71016S20YG; 800-1409; 800-1409-5; 800-1409

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
DC Electrical Characteristics
(V
DC Electrical Characteristics
(V
NOTES:
1. All values are maximum guaranteed values.
2. f
Absolute Maximum Ratings
I
I
I
I
P
V
T
T
T
OUT
CC
SB
SB1
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit)
A
BIAS
STG
T
TERM
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CC
CC
Symbol
Symbol
Symbol
MAX
TERM
V
|I
V
|I
(2)
LO
OH
OL
LI
= 5.0V ± 10%, V
= 5.0V ± 10%, Commercial and Industrial Temperature Range)
= 1/t
|
must not exceed V
|
RC
(all address inputs are cycling at f
Respect to GND
Operating Temperature
Under Bias
Storage
Power Dissipation
DC Output Current
Terminal Voltage with
Temperature
Temperature
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Dynamic Operating Current
Standby Power Supply Current (TTL Level)
Standby Power Supply Current (CMOS Level)
CS < V
CS > V
CS > V
V
IN
< V
IL
IH
HC
LC
CC
, Outputs Open, V
Rating
, Outputs Open, V
, Outputs Open, V
or V
+ 0.5V.
IN
> V
LC
HC
Parameter
= 0.2V, V
CC
CC
Parameter
CC
= Max., f = f
= Max., F = f
MAX
= Max., f = 0
-0.5 to +7.0
-55 to +125
-55 to +125
0 to +70
); f = 0 means no address input lines are changing .
Value
1.25
50
HC
= V
MAX
MAX
(1)
(2)
(2)
CC
(2)
(1)
3210 tbl 03
–0.2V)
Unit
mA
o
o
o
W
V
C
C
C
I
I
V
V
OL
OH
CC
CC
6.42
= 8mA, V
= -4mA, V
= Max., V
= Max., CS = V
3
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
NOTE:
1. V
Capacitance
(T
NOTE:
1. This parameter is guaranteed by device characterization, but not production
Symbol
Commercial
Symbol
A
GND
Industrial
V
tested.
V
V
C
C
Grade
IL
CC
CC
IH
IL
= +25° C, f = 1.0MHz, SOJ/TSOP Package)
I/O
CC
Com'l.
IN
IN
(min.) = –1.5V for pulse width less than tRC/2, once per cycle.
210
60
10
= Min.
Test Conditions
= GND to V
= Min.
71016S12
Input High Voltage
Input Low Voltage
Supply Voltage
Ground
IH
Input Capacitance
I/O Capacitance
, V
OUT
Commercial and Industrial Temperature Ranges
Ind.
210
60
10
Parameter
Parameter
CC
= GND to V
–40°C to +85°C
0°C to +70°C
Temperature
Com'l.
180
50
10
71016S15
(1)
CC
Ind.
180
50
10
-0.5
Min.
4.5
2.2
0
V
Conditions
V
(1)
OUT
Min.
IN
2.4
___
___
___
Com'l.
GND
= 3dV
170
45
10
= 3dV
0V
0V
71016S20
Typ.
5.0
____
____
0
Max.
0.4
___
V
Ind.
5
5
170
45
10
DD
Max.
5.0V ± 10%
5.0V ± 10%
5.5
Max.
0.8
0
+0.5
6
7
V
3210 tbl 07
3210 tbl 08
CC
3210 tbl 04
3210 tbl 05
3210 tbl 06
Unit
Unit
µ A
µ A
mA
mA
mA
Unit
V
V
Unit
pF
pF
V
V
V
V