CY6264-55SNXI Cypress Semiconductor Corp, CY6264-55SNXI Datasheet - Page 4

• Manufacturer Part Number: CY6264-55SNXI
• Description: IC SRAM 64KBIT 55NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY6264-55SNXI

• Memory Size: 64K (8K x 8)
• Package / Case: 28-SOIC (7.5mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 260 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

AC Test Loads and Waveforms
Switching Characteristics
Document #: 001-02367 Rev. *B
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
Notes
OUTPUT
RC
AA
OHA
ACE1
ACE2
DOE
LZOE
HZOE
LZCE1
LZCE2
HZCE
PU
PD
WC
SCE1
SCE2
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
3. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
4. t
5. At any given temperature and voltage condition, t
6. The internal write time of the memory is defined by the overlap of CE
Parameter
I
signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
INCLUDING
OL
HZOE,
5V
/I
OH
JIG AND
SCOPE
t
HZCE
and 30-pF load capacitance.
30 pF
, and t
[6]
R1 481
(a)
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
CE
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE
CE
CE
CE
CE
CE
Write Cycle Time
CE
CE
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
1
2
1
2
1
2
1
1
1
2
are specified with C
LOW to Data Valid
HIGH to Data Valid
LOW to Low Z
HIGH to Low Z
HIGH to High Z
LOW to High Z
LOW to Power-Up
HIGH to Power-Down
LOW to Write End
HIGH to Write End
R2
255
OUTPUT
Description
Over the Operating Range
[5]
[4]
INCLUDING
[4]
L
[4, 6]
5V
= 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
JIG AND
SCOPE
HZCE
5 pF
is less than t
(b)
R1 481
LZCE
1
LOW, CE
R2
255
for any given device.
[3]
2
HIGH, and WE LOW. Both signals must be LOW to initiate a write and either
Equivalent to:
Min.
55
50
40
30
40
25
25
5
3
5
3
0
0
0
0
5
GND
3.0V
-55
OUTPUT
< 5 ns
Max.
THEVENIN EQUIVALENT
55
55
40
25
20
20
25
20
10%
ALL INPUT PULSES
90%
Min.
70
70
60
50
55
40
35
167
5
5
5
5
0
0
0
0
5
-70
Max.
1.73V
70
70
70
35
30
30
30
30
90%
10%
< 5 ns
CY6264
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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