CY7C1049DV33-10ZSXI Cypress Semiconductor Corp, CY7C1049DV33-10ZSXI Datasheet - Page 6

IC SRAM 4MBIT 10NS 44TSOP

CY7C1049DV33-10ZSXI

Manufacturer Part Number
CY7C1049DV33-10ZSXI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C1049DV33-10ZSXI

Memory Size
4M (512K x 8)
Package / Case
44-TSOP II
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
4.6 V
Supply Voltage (min)
- 0.3 V
Maximum Operating Current
90 mA
Organization
512 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1982
CY7C1049DV33-10ZSXI

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Switching Waveforms
Notes
Document Number: 38-05475 Rev. *F
13. Device is continuously selected. OE, CE = V
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
16. Data IO is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
DATA OUT
ADDRESS
ADDRESS
CURRENT
DATA I/O
DATA OUT
ADDRESS
SUPPLY
CE
WE
CE
V
OE
OE
CC
NOTE 17
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
PU
IH
.
t
LZCE
t
SA
t
HZOE
IL
t
t
.
LZOE
ACE
Figure 4. Read Cycle No. 2 (OE Controlled)
50%
t
t
OHA
DOE
Figure 3. Read Cycle No. 1
t
t
AA
AW
t
t
RC
SCE
t
WC
t
RC
DATA
t
t
PWE
SD
IN
[13, 14]
DATA VALID
VALID
[14, 15]
t
HZOE
t
HA
DATA VALID
[16, 17]
t
HD
t
HZCE
CY7C1049DV33
t
PD
50%
IMPEDANCE
HIGH
Page 6 of 11
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