CY62157EV30LL-45ZSXI Cypress Semiconductor Corp, CY62157EV30LL-45ZSXI Datasheet - Page 5

• Manufacturer Part Number: CY62157EV30LL-45ZSXI
• Description: IC SRAM 8MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62157EV30LL-45ZSXI

• Memory Size: 8M (512K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2079; CY62157EV30LL-45ZSXI

Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05445 Rev. *H
C
C
Parameter
Parameter
IN
OUT


JC
JA
Parameters
OUTPUT
Thermal resistance
(Junction to Ambient)
Thermal resistance
(Junction to Case)
Input capacitance
Output capacitance
INCLUDING
R
V
R1
R2
V
SCOPE
TH
TH
JIG AND
Description
Description
CC
30 pF
R1
T
V
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
A
CC
R2
= 25°C, f = 1 MHz,
Figure 4. AC Test Loads and Waveforms
= V
CC(typ)
Rise Time = 1 V/ns
Test Conditions
16667
15385
8000
2.5V
1.20
Test Conditions
GND
V
CC
Equivalent to:
10%
OUTPUT
ALL INPUT PULSES
90%
THÉ VENIN EQUIVALENT
BGA
8.86
72
1554
3.0V
1103
1.75
645
R
TH
TSOP I
74.88
90%
8.6
10%
Max
CY62157EV30 MoBL
Fall Time = 1 V/ns
10
10
V
TH
TSOP II
76.88
13.52
Unit



V
Unit
pF
pF
C/W
C/W
Unit
Page 5 of 17
®
[+] Feedback