CY7C1360C-200AXC Cypress Semiconductor Corp, CY7C1360C-200AXC Datasheet - Page 21

• Manufacturer Part Number: CY7C1360C-200AXC
• Description: IC SRAM 9MBIT 200MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1360C-200AXC

• Memory Size: 9M (256K x 36)
• Package / Case: 100-LQFP
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 220 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2126; CY7C1360C-200AXC

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
Electrical Characteristics
Over the Operating Range
Document Number: 38-05540 Rev. *K
Parameter
V
V
V
V
V
V
I
I
Notes
Commercial 0 °C to +70 °C
X
OZ
18. Overshoot: V
19. T
DD
DDQ
OH
OL
IH
IL
Industrial
Range
Power-up
: Assumes a linear ramp from 0 V to V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current
–40 °C to +85 °C
IH
Temperature
(AC) < V
Ambient
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[18, 19]
[18]
[18]
3.3 V – 5 % /
+ 10%
V
DD
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O
for 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
GND ≤ V
DD
(min) within 200 ms. During this time V
2.5 V – 5% to
I
SS
DD
SS
DD
I
DDQ
CYC
≤ V
≤ V
DD
V
V
/2), undershoot: V
DDQ
DDQ,
DDQ
+ 0.5 V
+ 0.5 V
OH
OH
OL
OL
DD
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
DD
output disabled
Test Conditions
IL
(AC) > –2 V (Pulse width less than t
Neutron Soft Error Immunity
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
Application Note AN54908
of Terrestrial Failure Rates”
Parameter
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to
and V
Description
Single event
single-bit
DDQ
latch-up
multi-bit
Logical
Logical
upsets
upsets
< V
CY7C1360C, CY7C1362C
“Accelerated Neutron SER Testing and Calculation
DD
.
CYC
Conditions
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
25 °C
25 °C
85 °C
2.4
2.0
2.0
1.7
–5
–5
–5
Test
–
–
–
–
V
V
DD
DD
Typ Max* Unit
361
2.625
0
0
Max
V
3.6
0.4
0.4
0.8
0.7
+ 0.3 V
+ 0.3 V
30
–
–
5
–
5
–
5
DD
Page 21 of 34
0.01
394
0.1
Unit
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
FIT/
FIT/
FIT/
Dev
Mb
Mb
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