CY14B256L-SP35XI Cypress Semiconductor Corp, CY14B256L-SP35XI Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY14B256L-SP35XI
Manufacturer Part Number
CY14B256L-SP35XI
Description
IC NVSRAM 256KBIT 35NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Specifications of CY14B256L-SP35XI
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-SSOP
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
3.3V
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
60mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256L-SP35XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Preventing Store
Disable the AutoStore function by initiating an AutoStore Disable
sequence. A sequence of READ operations is performed in a
manner similar to the software STORE initiation. To initiate the
AutoStore Disable sequence, perform the following sequence of
CE controlled or OE controlled READ operations:
Re-enable the AutoStore by initiating an AutoStore Enable
sequence. A sequence of READ operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore Enable sequence, perform the following sequence of
CE controlled or OE controlled READ operations:
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (Hardware or Software) is issued to save the
AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Document Number: 001-06422 Rev. *I
1. Read Address 0x0E38 Valid READ
2. Read Address 0x31C7 Valid READ
3. Read Address 0x03E0 Valid READ
4. Read Address 0x3C1F Valid READ
5. Read Address 0x303F Valid READ
6. Read Address 0x03F8 AutoStore Disable
1. Read Address 0x0E38 Valid READ
2. Read Address 0x31C7 Valid READ
3. Read Address 0x03E0 Valid READ
4. Read Address 0x3C1F Valid READ
5. Read Address 0x303F Valid READ
6. Read Address 0x07F0 AutoStore Enable
Best Practices
nvSRAM products have been used effectively for over 15 years.
While ease of use is one of the product’s main system values,
experience gained working with hundreds of applications has
resulted in the following suggestions as best practices:
■
■
■
■
The nonvolatile cells in an nvSRAM are programmed on the
test floor during final test and quality assurance. Incoming
inspection routines at customer or contract manufacturer’s
sites sometimes reprogram these values. Final NV patterns are
typically repeating patterns of AA, 55, 00, FF, A5, or 5A. End
product’s firmware should not assume an NV array is in a set
programmed state. Routines that check memory content
values to determine first time system configuration, cold or
warm boot status, and so on should always program a unique
NV pattern (for example, complex 4-byte pattern of 46 E6 49
53 hex or more random bytes) as part of the final system
manufacturing test to ensure these system routines work
consistently.
Power up boot firmware routines should rewrite the nvSRAM
into the desired state. While the nvSRAM is shipped in a preset
state, the best practice is to again rewrite the nvSRAM into the
desired state as a safeguard against events that might flip the
bit inadvertently (program bugs, incoming inspection routines,
and so on).
If autostore is firmware disabled, it does not reset to “autostore
enabled” on every power down event captured by the nvSRAM.
The application firmware should re-enable or re-disable
autostore on each reset sequence based on the behavior
desired.
The V
and a maximum value size. Best practice is to meet this
requirement and not exceed the maximum V
higher inrush currents may reduce the reliability of the internal
pass transistor. Customers that want to use a larger V
to make sure there is extra store charge should discuss their
V
the V
CAP
CAP
CAP
size selection with Cypress to understand any impact on
voltage level at the end of a t
value specified in this data sheet includes a minimum
RECALL
CY14B256L
CAP
period.
value because
Page 6 of 19
CAP
value
[+] Feedback
[+] Feedback