STPS20SM60SG-TR STMicroelectronics, STPS20SM60SG-TR Datasheet - Page 3

no-image

STPS20SM60SG-TR

Manufacturer Part Number
STPS20SM60SG-TR
Description
Schottky Diodes & Rectifiers 60V PWR Schottky REC 0.365 V 2 x 20 A
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20SM60SG-TR

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
60 A
Max Surge Current
400 A
Configuration
Single
Forward Voltage Drop
0.535 V
Maximum Reverse Leakage Current
85 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
STPS20SM60S
Figure 2.
Figure 4.
Figure 6.
0.001
18
16
14
12
10
280
240
200
160
120
0.01
8
6
4
2
0
80
40
0.1
1.E-03
0
0
1
P
0.01
F(AV)
I (A)
M
P
I
M
P
ARM
2
ARM
(W)
(1µs)
δ = 0.5
(t p )
4
t
0.1
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
6
δ = 0.05
1.E-02
8
10
1
δ = 0.1
12
δ = t / T
p
14
δ = 0.2
T
16
10
1.E-01
t
p
18
20
δ = 0.5
100
T = 125 °C
T = 25 °C
T = 75 °C
c
22
c
c
Doc ID 022058 Rev 1
I
F(AV)
24
t(s)
t (µs)
1.E+00
δ = 1
p
(A)
1000
26
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
24
20
16
12
1
0
25
8
4
0
1.E-04
P
0
I
ARM
Z
F(AV)
P
th(j-c)
ARM
Single pulse
(25 °C)
(A)
(T )
/R
j
th(j-c)
25
50
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
1.E-03
50
75
R th(j-a) = R th(j-c)
T
amb
1.E-02
75
(°C)
100
100
1.E-01
Characteristics
125
125
t (s)
p
T (°C)
1.E+00
j
150
3/9
150

Related parts for STPS20SM60SG-TR